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  1. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

    $323.91

    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    MFR: M/A-COM
    SKU: MRF150-MA-MQ

  2. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)

    $161.91

    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    MFR: M/A-COM
    SKU:MRF150-MA-MP

  3. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V

    $80.91

    MRF150 RF Power FET Transistor 150W to 150MHz 50V M/A-COM
    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    SKU: MRF150-MA

  4. MRF148A M/A-COM Linear RF Power FET 30W 175MHz 50V (NOS)

    MRF148A M/A-COM Linear RF Power FET 30W 175MHz 50V (NOS)

    Designed for power amplifier applications in industrial,  commercial and amateur radio equipment to 175MHz.

    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF148A-MA

  5. MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V

    MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V

    Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high  gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency  band solid state transmitters and amplifiers.

    • Guaranteed performance at 30 MHz, 28V:  Output power: 150W  Gain: 8dB (22dB Typ.)  Efficiency: 40%
    • Typical Performance at 175MHz, 50V:  Output Power: 150 W  Gain: 13 dB
    • Low thermal resistance
    • Ruggedness tested at rated output power
    • Nitride passivated die for enhanced reliability

    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF141-MA

  6. MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (2)

    MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (2)

    $249.91

    Made with original Motorola Die

    Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode

    • Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)
    • Superior high order IMD
    • MD(d3) (150 W PEP): –30 dB (Typ.)
    • IMD(d11) (150 W PEP): –60 dB (Typ.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: M/A-COM
    SKU: MRF140-MP-MA

  7. MRF140 M/A-COM Transistor 150W 28V 150 MHz

    MRF140 M/A-COM Transistor 150W 28V 150 MHz

    $125.91

    Made with original Motorola Die

    Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode

    • Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)
    • Superior high order IMD
    • MD(d3) (150 W PEP): –30 dB (Typ.)
    • IMD(d11) (150 W PEP): –60 dB (Typ.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: M/A-COM
    SKU: MRF140-MA

  8. 2SK520L JFET N-Channel 30v 30~50mA SOT-23 marking K41 (NOS)

    2SK520L JFET N-Channel 30v 30~50mA SOT-23 marking K41 (NOS)

    $5.91

    • Lead Free
    • New Old Stock * No longer available for export

    SKU: 2SK520L

  9. 2SK508L NPN Epitaxial Silicon Transistor (NOS)

    2SK508L NPN Epitaxial Silicon Transistor (NOS)

    $3.91

    HIgh Frequency Amplifer N-Channel Silicon Junction Field Effect Transistor.
    A NPN transistor with HIgh forward transfer admittance and low input capacitance. Suitable for cordless telephone, AM tuner and wireless installation.

    • Lead Free
    • Classification: K52 -15 ~ 30 mA

    New Old Stock * No longer available for export
    SKU: 2SK508L

  10. 2SK507 NEC Small Signal Field Effect Transistor (NOS)

    2SK507 NEC Small Signal Field Effect Transistor (NOS)

    $3.91

    • Video band RF Amilification
    • Volts: 15
    • Amps: 50mA
    • Watts: 350mW

    New Old Stock * No longer available for export
    MFR: NEC
    SKU: 2SK507

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