Search results for 'rg-189 7/8" 50 ohm coax'

• Material of Transistor: Silicon
• Polarity: PNP
• Maximum Collector-Base Voltage |Vcb|: 60 V
• Transition Frequency (ft): 500 MHz

New Old Stock * No longer available for export
MFR: Motorola
SKU: 2N5161

Intended as a high-ppwer, Class B and C RF amplifier for FM Communications with a 24-volt power supply.

• 24v FM (30 to 70 MHz)
• 24 Watts Output at 76 MHz with 9dB Gain (minimum)
• Low Thermal Resistance

MFR: RCA
SKU: 2N5071

Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters.

• Guaranteed Performance @ 1090 MHz, 50 Vdc

                Output Power = 150 Watts Peak
                Minimum Gain = 7.8 dB

New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF1150M

Data Sheet

• Maximum Power Dissipation (Pd): 0.225 W
• Maximum Drain-Source Voltage |Vds|: 20 V

New Old Stock * No longer available for export
MFR: Siemens
SKU: BF964

• PT: 50w
• I_c: 7A
• Frequncy: 0.8 MHz

New Old Stock * No longer available for export
MFR: RCA
SKU: SK3054

RD70HUP2 is a MOSFET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

• High Power and High Efficiency Pout=75Wtyp
• Drain Effi.=64.0%typ @ Vds=12.5V Idq=1.0A Pin=5.0W f=530MHz Pout=84Wtyp
• Drain Effi.=74%typ @ Vds=12.5V Idq=1.0A Pin=4.0W f=175MHz
• Integrated gate protection diode.

RoHS Compliant
MFR: Mitsubishi
SKU: RD70HUP2-501

See Data Sheet

RD70HVF1C is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications 

High power and High Gain:
Pout>70W, Gp>10.6dB @Vds=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vds=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
Integrated gate protection diode

RoHS Compliant
MFR: Mitsubishi
SKU: RD70HVF1C-501

See Data Sheet for more information

MOSFET Silicon Power Transistor 175MHz - 520MHz 15W
RoHS Compliant
MFR #: RD15HVF1-501
MFR: Mitsubishi, Japan
SKU: RD15HVF1-501

EOL 12/2022

The RD100HHF1C-501 is a high-performance transistor suitable for use in a variety of applications where high-power and high-frequency operation are required, such as in radio transmitters, RF amplifiers, and other communications equipment.

The RD100HHF1C-501 is a power transistor designed for use in high-frequency applications, with a maximum operating frequency of 30MHz. It is capable of handling up to 100 watts of power and operates at a voltage of 12.5V.

Will replace the original RD100HHF1-101.

MOSFET Power Transistor 30MHz 100 Watts 12.5 Volts
RoHS Compliant
MFR: Mitsubishi
Made in Japan
SKU: RD100HHF1C-501

Data Sheet