Search results for '2,5MH rf choke'

• 1.2 GHz Current-Gain Bandwidth @ 5mA IC
• Maximum Unilateral Gain: 12dB (Typical) @ 400 MHz

MFR: Motorola
SKU: 2N5031-MOT

Data Sheet

• Transistor Polarity: NPN
• Maximum Collector Emitter Voltage: 12 V
• Maximum Collector Current: 0.05A

New Old Stock * No longer available for export
MFR: Motorola
SKU: 2N5179-MOT

Transistor NPN Silicon RF 100W 150 MHz (NOS)

• Short Leads
• Output Power: 100 watts
• Minimum Gain: 6.0 dB
• Efficiency: 60%

New Old Stock * No longer available for export
MFR: Motorola
SKU: 2N6166S

• Polarity: PNP
• Maximum Collector Power Dissipation (Pc): 75 W
• Maximum Collector Current |Ic max|: 50 A
• Package: TO36

MFR: RF

• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 500MHz

New Old Stock
MFR: Motorola
SKU: 2N2857-MOTO

• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 500MHz

New Old Stock
MFR: Microsemi Corporation
SKU: 2N2857-MSC

 Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering the VHF-UHF Region.

• Maximum Collector Power Dissipation (Pc): 12 W
• Maximum Collector-Base Voltage |Vcb|: 65 V

Designed for Class A, B, C Amplifier, Oscillator and Driver Applications Covering the VHF-UHF Region.

New Old Stock
MFR: ST Microelectronics
SKU: 2N3375-ST

The 2N3819 is a N−Channel RF Amplifier transistor designed for RF amplifier and mixer applications operating up to 450Mhz, and for analog switching requiring low capacitance.

MFR: Natioanal Semiconductor
SKU: 2N3819