Search results for '2,5MH rf choke'

IRF510 Transistor, 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

• Transistor Polarity:N Channel
• Continuous Drain Current Id:33A
• Drain Source Voltage Vds:100V
• On Resistance Rds(on):0.044ohm
• Rds(on) Test Voltage Vgs:10V
• Threshold Voltage Vgs:4V
• No. of Pins: 3 Pins
• Operating Temperature Max:175°C

MFR: IR
SKU: IRF540N

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

MFR: Polyfet
New Old Stock * No longer available for export
Matched Pairs available upon request.
SKU: F2012