Search results for: '2,5MH rf choke'

IRF520 Transistor, Mosfet, (IRF520PBF) Vishay Siliconix

$2.91 As low as: $2.49

IRF520 Transistor, Mosfet, ( IRF520BPF ) MFR: Vishay Siliconix

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F2012 Polyfet Silicon Gate RF Power VDMOS Transistor 10 Watts Single Ended 28 Volts 10dB Gain 1 GHz (NOS)

$35.91

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

MFR: Polyfet
New Old Stock * No longer available for export
Matched Pairs available upon request.
SKU: F2012

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IRF540N IR HEXFET® Power MOSFET

$2.91

Transistor Polarity:N Channel
Continuous Drain Current Id:33A
Drain Source Voltage Vds:100V
On Resistance Rds(on):0.044ohm
Rds(on) Test Voltage Vgs:10V
Threshold Voltage Vgs:4V
No. of Pins: 3 Pins
Operating Temperature Max:175°C

MFR: IR
SKU: IRF540N

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IRF510 N-Channel Power MOSFET Transistor 5.6A 100V 0.540 Ohm

$1.91

IRF510 Transistor, 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

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Search results for '2,5MH rf choke'

IRF520 Transistor, Mosfet, (IRF520PBF) Vishay Siliconix

F2012 Polyfet Silicon Gate RF Power VDMOS Transistor 10 Watts Single Ended 28 Volts 10dB Gain 1 GHz (NOS)

IRF540N IR HEXFET® Power MOSFET

IRF510 N-Channel Power MOSFET Transistor 5.6A 100V 0.540 Ohm

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