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  1. 3SK140 Toshiba Transistor UHF Dual Gate GaAs FET (NOS)

    3SK140 Toshiba Transistor UHF Dual Gate GaAs FET (NOS)

    $2.91

    Transistor UHF Dual Gate GaAs FET
    New Old Stock * No longer available for export
    MFR: Toshiba
    SKU: 3SK140

    Data Sheet

  2. MRF966 Motorola N-Channel Dual-Gate GaAs Field-Effect Transistor 12V (NOS)

    MRF966 Motorola N-Channel Dual-Gate GaAs Field-Effect Transistor 12V (NOS)

    $6.91

    Depletion mode dual-gate MES FET designed for high frequency amplifier and mixer applications.

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF966

  3. 3SK177 NEC N-Channel GaAs Dual-Gate MES Filed-Effect Transistor (NOS)

    3SK177 NEC N-Channel GaAs Dual-Gate MES Filed-Effect Transistor (NOS)

    • RF Amplifier for UHF TV Tuner. 
    • 4 PIn Mini Mold

    New Old Stock * No longer available for export
    MFR: NEC Corporation
    SKU: 3SK177

  4. 3SK174 / NE25137 NEC Dual Gate FET Transistor (NOS)

    3SK174 / NE25137 NEC Dual Gate FET Transistor (NOS)

    $4.91

    New Old Stock * No longer available for export
    MFR: NEC
    SKU: 3SK174/NE25137

  5. NE32184A Transistor, gasfet

    NE32184A Transistor, gasfet

    NE32184A Transistor, gasfet

  6. MGF4919G Mitsubishi GasFet Transistor

    MGF4919G Mitsubishi GasFet Transistor

    GasFet Transistor
    MFR: Mitsubishi
    SKU: MGF4919G

  7. MGF1302 Mitsubishi Low-Noise GaAs FET Transistor (NOS)

    MGF1302 Mitsubishi Low-Noise GaAs FET Transistor (NOS)

    $19.91

    MGF1302 Mitsubishi Low-Noise GaAs FET (NOS)

    The MFG1302 is a low-noise GaAs FET with an N-Channel Schottky gate, which is designed for use in the S to X band amplifiers and oscillators.  The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.

    New Old Stock * No longer available for export
    MFR: Mitsubishi

    Data Sheet

  8. BF980 Philips Silicon N-Channel Dual Gate MOS-FET Transistor (NOS)

    BF980 Philips Silicon N-Channel Dual Gate MOS-FET Transistor (NOS)

    $2.91

    Depletion type field-effect trnasistor in a plastic X-package. Intended for UHF applications with 12v Supply voltage.

    • Drain Source Voltage (MAX): 18v
    • Drain Current (MAX): 30mA
    • Total Power disipation (MAX): 225mW

    New Old Stock * No longer available for export
    MFR: Philips Electronics
    SKU: BF980

  9. BF966S Vishay N Channel Dual Gate MOS - Field Effect Triode Depletion Mode Transistor (NOS)

    BF966S Vishay N Channel Dual Gate MOS - Field Effect Triode Depletion Mode Transistor (NOS)

    $1.91

    • EU RoHS: Compliant
    • Configuration: Single Dual Gate
    • Channel Type: N

    New Old Stock * No longer available for export
    MFR: Vishay
    SKU: BF966S

9 Item(s)