Search results for 'mrf'
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SRF7000-90 Motorola Transistor 70W 12.5V 14-30 MHz 0.380" Flange (MRF455) Matched Pair (2) (NOS)
$159.91 -
MRF227 Microsemi NPN Silicon RF Power Transistor 12.5 V 225 MHz 3W
$6.91 As low as: $5.61Designed for 12.5 Volt VHF large-signal power amplifier applications in communication equipment operating at 225 MHz. Ideally suited for Class E citizens band radio.
- Specified 12.5 Volt, 225 MHz Characteristics- Output Power= 3.0 W, Minimum Gain= 13.5 dB, efficiency= 60%
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF227-MSC -
MRF237 Microsemi NPN Silicon RF Power Transistor 12.5 V/90 MHz/15 W (NOS)
$9.91 -
MRF247 TRW Transistor 175 MHz 75w 12.5v (Low Beta) (NOS)
$54.91 -
MRF3866 APT RF & Microwave Discrete Low Power Transistor 17 dB 300 MHz
$1.91 As low as: $1.72 -
MRF4427 Microsemi RF & Microwave Discrete Low Power Transistor 20dB 200 MHz (NOS)
$1.91Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.
- Low Cost SO-8 Plastic Surface Mount Package.
- S-Parameter Characterization
- Tape and Reel Packaging Options Available
- Low Voltage Version of MRF3866
- Maximum Available Gain – 20dB(typ) @ 200MHz
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF4427-MSC -
MRF517 APT RF & Microwave Discrete Low Power Transistor
$7.91 As low as: $7.13The MRF517 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include low noise broadband amplifier; pre-driver, driver, and output stages.
- Silicon NPN, To-39 packaged VHF/UHF Transistor
- Gpe = 10 dB (typ) @ 60 mA, 300 MHz
- 3 GHz Current-Gain Bandwidth Product @ 60mA
- Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz
MFR: Advanced Power Technology RF
SKU: MRF517-APT -
MRF517 Microsemi NPN Silicon RF and Microwave Discrete Low Power Transistor
$7.91 -
MRF544 APT NPN Silicon RF and Microwave Discrete Low Power Transistor (NOS)
$5.91 As low as: $5.06Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
- Silicon NPN, high Frequency, high breakdown Transistor
- Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz
- High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
- High FT - 1400 MHz
New Old Stock * No longer available for export
MFR: APT -
MRF545 APT RF and Microwave Discrete Low Power Transistor (NOS)
$4.91Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
- Silicon PNP, high Frequency, high breakdown, Transistor
- Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz
- High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
- High FT - 1400 MHz
New Old Stock * No longer available for export
MFR: Advanced Power Technology RF
SKU: MRF545-APT
