Radio & Amplifier Service Parts
Please choose from the following RADIO & AMPLIFIER SERVICE PARTS Sub-Catagory choices:
| ATLAS RADIO | ||
| TEXAS STAR | ||
| SWAN | KLM | YAESU |
| DRAKE |
|
ALLIGATOR CLIP LEADS |
| RADIO TOOLS | METER SHUNTS | |
| TERMINAL BLOCKS |
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RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V
$49.91 As low as: $42.79 -
RD100HHF1C-501 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V
$54.91 As low as: $44.72The RD100HHF1C-501 is a high-performance transistor suitable for use in a variety of applications where high-power and high-frequency operation are required, such as in radio transmitters, RF amplifiers, and other communications equipment.
The RD100HHF1C-501 is a power transistor designed for use in high-frequency applications, with a maximum operating frequency of 30MHz. It is capable of handling up to 100 watts of power and operates at a voltage of 12.5V.
Will replace the original RD100HHF1-101.
MOSFET Power Transistor 30MHz 100 Watts 12.5 Volts
RoHS Compliant
MFR: Mitsubishi
Made in Japan
SKU: RD100HHF1C-501 -
RD15HVF1-501 Mitsubishi MOSFET RF Power Transistor 175 MHz 15W
$14.91 As low as: $12.76 -
RD70HVF1C-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz 70W / 520MHz 50W
$39.91 As low as: $37.91Out of stock
Popular part used in Icom 7300.
RD70HVF1C is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications
High power and High Gain:
Pout>70W, Gp>10.6dB @Vds=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vds=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
Integrated gate protection diodeRoHS Compliant
MFR: Mitsubishi
SKU: RD70HVF1C-501See Data Sheet for more information
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RD70HUP2-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz - 530MHz 70W 12.5V
$26.91 As low as: $23.07RD70HUP2 is a MOSFET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
- High Power and High Efficiency Pout=75Wtyp
- Drain Effi.=64.0%typ @ Vds=12.5V Idq=1.0A Pin=5.0W f=530MHz Pout=84Wtyp
- Drain Effi.=74%typ @ Vds=12.5V Idq=1.0A Pin=4.0W f=175MHz
- Integrated gate protection diode.
RoHS Compliant
MFR: Mitsubishi
SKU: RD70HUP2-501See Data Sheet
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RD00HVS1-T113 Mitsubishi Transistor (NOS)
$1.91 -
RD01MUS1-T113 Mitsubishi Transistor (NOS)
$1.91 -
RD01MUS2 Mitsubishi Transistor (NOS)
$1.91 -
RD02MUS1-T112 Mitsubishi Transistor (NOS)
$4.91 -
RD06HHF1-101 Mitsubishi Transistor 6W 30 MHz 12.5V (NOS)
$13.91
