Low Noise Gas Fet
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3SK121Y Toshiba, GaAs MES Fet, N-Channel, u-X Package
$9.91 -
3SK140 Toshiba Transistor UHF Dual Gate GaAs FET (NOS)
$2.95 -
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3SK177 NEC N-Channel GaAs Dual-Gate MES Filed-Effect Transistor (NOS)
$1.91 As low as: $1.81 -
BF966S Vishay N Channel Dual Gate MOS - Field Effect Triode Depletion Mode Transistor (NOS)
$1.91 -
MGA87563 AEROFLEX / INMET Monolithic Microwave Integrated Circuit .0.5-4.3 GHz 3 Volts (NOS)
$2.91 -
MGF1302 Mitsubishi Low-Noise GaAs FET Transistor (NOS)
$19.91MGF1302 Mitsubishi Low-Noise GaAs FET (NOS)
The MFG1302 is a low-noise GaAs FET with an N-Channel Schottky gate, which is designed for use in the S to X band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.
New Old Stock * No longer available for export
MFR: Mitsubishi -
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