MRF100 Series
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MRF173CQ Motorola RF MOSFET Transistor 80W 175MHz 28V (NOS)
$74.91Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode MOSFET
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF173CQ-MOT -
MRF164W Motorola Power Field Effect Transistor 28 Volt (NOS)
$69.91Designed primarily for wideband large-scale output and driver stages to 500MHz.
- Guaranteed Performance at 400 MHZ, 28 Vdc
- Output Power: 20 W
- Minimum Gain: 15dB
- Push-Pull Configuration Reduces Even Bumbered Harmonics
- Excellent Thermal Stability, suited for Class A Operation
- Allows Manual Gain Control, ALC and Modulation Techniques
- 30:1 VSWR
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF164W -
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MRF151G Motorola MOSFET RF Power Transistor 300W 50V 175 MHz (NOS)
$189.91Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF151G-MOT -
MRF175GV M/A-COM Transistor 200 watt 28v 225 MHz (NOS)
$215.91Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
- Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix),
- Output power — 200 W, Power gain — 14 dB typical, Efficiency — 65% typical
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 20 pF typical @ VDS = 28 V
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF175GV-MA -
MRF175GU M/A-COM Transistor 150 watt 28v 400 MHz
$191.91 As low as: $182.31Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
- Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 20 pF typ @ VDS = 28 V
MRF: M/A-COM
SKU: MRF175GU-MA -
MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET
$118.91Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
• Enhanced thermal performance
• Higher power dissipation Guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40% Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced ReliabilityMFR: M/A-COM
SKU: MRF151A-MA -
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)
$161.91TMOS Designed primarily for linear large-signal output stages up to 150 MHz.
• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
MFR: M/A-COM
SKU:MRF150-MA-MP -
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V
$80.91MRF150 RF Power FET Transistor 150W to 150MHz 50V M/A-COMTMOS Designed primarily for linear large-signal output stages up to 150 MHz.• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
SKU: MRF150-MA