MRF100 Series
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MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET
$118.91Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
• Enhanced thermal performance
• Higher power dissipation Guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40% Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced ReliabilityMFR: M/A-COM
SKU: MRF151A-MA -
MRF136 Motorola Transistor 15 Watt 28V 400 MHz (NOS)
$115.91Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in single-ended configuration N–Channel enhancement mode
- Guaranteed 28 volt, 150 MHz performance Output power = 15 watts Narrowband gain = 16 dB (Typ.) Efficiency = 60% (Typ.)
- Small– and large–signal characterization
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Excellent thermal stability, ideally suited for Cass A operation
- Facilitates manual gain control, ALC and modulation techniques
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF136-MP -
MRF166W M/A-COM Transistor RF MOSFET 40W 500MHz 28V
$109.91 As low as: $99.19 -
MRF1946A Motorola NPN Silicon Power Transistor Stud Mount 30 Watt 10 dB 12.5 Volt 175 MHz Matched Pair (2) (NOS)
$109.91Designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment.
- High Common Emitter Power Gain
- Specified 12.5 V, 175 MHz Performance: Output Power = 30 Watts, Power Gain = 10 dB, Efficiency = 60%
- Diffused Emitter Resistor Ballasting
- Characterized to 220 MHz
- Load Mismatch at High Line and Overdrive Conditions
New Old Stock * No longer available for export
MFR: Motorola
SKU: MFR1946A-MP -
MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz Matched Pair (2)
$97.91Out of stock
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode MOSFET
MRF: M/A-COM
SKU: MRF173MP-MA -
MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz
$94.91 As low as: $90.16Made with original Motorola Die
Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 Vdc
- Output power = 10 W
- Power gain = 12 dB min.
- Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input Impedance
MRF: M/A-COM
SKU: MRF134-MA -
MRF136Y Motorola Transistor 30 Watt 28V 400 MHz (NOS)
$94.91Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode
- Guaranteed 28 volt, 150 MHz performance Output power = 30 Watts Broadband gain = 14 dB (Typ.) Efficiency = 54% (Typ.)
- Small– and large–signal characterization
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Space saving package for push–pull circuit applications
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF136Y-MOT -
MRF177 M/A-COM RF MOSFET Transistor 100W 400MHz 28V
$89.91 As low as: $85.41Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. N–Channel enhancement mode MOSFET.
- Typical performance at 400 MHz, 28 V: Output power — 100 W, Gain — 12 dB, Efficiency — 60%
- Low thermal resistance
- Low Crss — 10 pF typ. @ VDS = 28 V
- Ruggedness tested at rated output power
- Nitride passivated die for enhanced reliability
- Excellent thermal stability; suited for Class A operation
MRF: M/A-COM
SKU: MRF177-MA -
MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz
$84.91 As low as: $76.62 -
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V
$80.91MRF150 RF Power FET Transistor 150W to 150MHz 50V M/A-COMTMOS Designed primarily for linear large-signal output stages up to 150 MHz.• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
SKU: MRF150-MA