Radio & Amplifier Service Parts

• Material of Transistor: Si
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 0.55 W
• Maximum Collector-Base Voltage |Vcb|: 70 V

New Old Stock * No longer available for export
MFR: Toshiba Corporation
SKU: 2SC495

Data Sheet

Transistor Silicon NPN Power
New Old Stock * No longer available for export
MFR: Toshiba
SKU: 2SC789

NPN Silicon Transistor 
New Old Stock * No longer available for export
MFR: Toshiba
SKU: 2SC1173

Transistor Silicon NPN Epitaxial Planar type
New Old Stock * No longer available for export
MFR: Toshiba
SKU: 2SC2347

• High breakdown voltage
• Fast switching speed.
• Wide area of safe operation
• For switching regulator applications

New Old Stock * No longer available for export
MFR: Toshiba
SKU: 2SC2914

Power:  80 Watts (Min.)   Frequency: 175 MHz
VCC: 12.5V   Pi: 18 Watts
NOTE: Early production part - pre 2005.  It is non-Rohs compliant.
Substitute for 2SC5125, MRF247, SRF3417

New Old Stock * No longer available for export
MFR: Toshiba, Japan
SKU: 2SC2782

The 2SC2782A is an NPN bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a silicon epitaxial planar transistor that is commonly used in various electronic applications, particularly in high-frequency and high-power amplifier circuits.

Will substitute for 2SC5125

New Old Stock * No longer available for export
MFR: Toshiba, Japan
SKU: 2SC2782A

The 2SC2782A is an NPN bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a silicon epitaxial planar transistor that is commonly used in various electronic applications, particularly in high-frequency and high-power amplifier circuits.

Used * No longer available for export
MFR: Toshiba
Made in Japan
SKU: 2SC2782A-P

• Low Saturation Voltage:  Vce (sat) = 0.25v (typ.) (Ic=500mA, Ib = 50mA)
• High Collector Power Dissaption:  Pc=1.2w (Ta=25°C)
• Complementary to 2SA1356

New Old Stock * Not for Export
MFR: Toshiba
SKU: 2SC3419Y

Data Sheet