Details
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2-30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS
(LOW SUPPLY VOLTAGE USE)
- Specified 12.5V, 28MHz Characteristics
- Output Power : Po=60W PEP
- Power Gain : Gp=11.8dB (min.)
- Collector Efficiency : C = 35% (Min.)
- Intermodulation Distortion : IMD = - 30dB (Max.)
For More info see data sheet
Product Attachments
 2SC2290 Size: (1.5 MB) |
