(800) 737-2787 (RF Parts)
(770) 614-7443 (Diamond)
rfp@rfparts.com
435 S. Pacific St.
San Marcos, CA 92078

MRF5003 RF Power Field Effect Transister, RF MOSFET, N–Channel Enhancement–Mode, 512 MHz, 7.5 V, 3.0 W, Motorola

no_selection

Be the first to review this product

In Stock
Call for Price
OR

Quick Overview

MRF5003 RF Power Field Effect Transister, RF MOSFET, N–Channel Enhancement–Mode, 512 MHz, 7.5 V, 3.0 W, MFR: Motorola

Details

MRF5003 RF Power Field Effect Transister, RF MOSFET, N–Channel Enhancement–Mode, 512 MHz, 7.5 V, 3.0 W, Motorola

Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base station FM equipment.

  • Guaranteed Performance at 512 MHz, 7.5 Volts: Output Power = 3.0 Watts, Power Gain = 9.5 dB, Efficiency = 45%
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • S–Parameter Characterization at High Bias Levels
  • Excellent Thermal Stability
  • All Gold Metal for Ultra Reliability
  • Capable of Handling 20:1 VSWR, at 15.5 Vdc, 512 MHz, 2.0 dB Overdrive
  • Suitable for 12.5 Volt Applications
  • True Surface Mount Package

Product Tags

Use spaces to separate tags. Use single quotes (') for phrases.