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RD07MVS1B-T112 Transistor, Mitsubishi (Full Tape & Reel) (2000 pieces)

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Quick Overview

RD07MVS1B-T112 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz, 7W (2000 piece Tape and Reel), MFR: Mitsubishi

Details

RD07MVS1B-T112 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz, 7W (2000 piece Tape and Reel)

MFR: Mitsubishi

DESCRIPTION
RD07MVS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure.

FEATURES
High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz
High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz)

APPLICATION
For output stage of high power amplifiers in VHF/UHF band mobile radio sets.

RoHS COMPLIANT
RD07MVS1B-101, T112 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)


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