Details
Transistor, Mitsubishi RD70HVF1
DESCRIPTION
RD70HVF1 is a MOS FET type transistor specifically
designed for VHF/UHF High power amplifiers
applications.
FEATURES
•High power and High Gain:
Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz
•High Efficiency: 60%typ.on VHF Band
•High Efficiency: 55%typ.on UHF Band
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 30 V
VGSS Gate to source voltage Vds=0V +/-20 V
Pch Channel dissipation Tc=25°C 150 W
Pin Input power Zg=Zl=50Ω 10(Note2) W
ID Drain current - 20 A
Tch Channel temperature - 175 °C
Tstg Storage temperature - -40 to +175 °C
Rth j-c Thermal resistance junction to case 1.0 °C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED)
LIMITS UNIT SYMBOL PARAMETER CONDITIONS
MIN TYP MAX.
IDSS Zerogate voltage drain current VDS=17V, VGS=0V - - 300 uA
IGSS Gate to source leak current VGS=10V, VDS=0V - - 5 uA
VTH Gate threshold voltage VDS=12V, IDS=1mA 1.3 1.8 2.3 V
Pout Output power f=175MHz ,VDD=12.5V 70 75 - W
ηD Drain efficiency Pin=6W, Idq=2.0A 55 60 - %
Pout Output power f=520MHz ,VDD=12.5V 50 55 - W
ηD Drain efficiency Pin=10W, Idq=2.0A 50 55 - %
Load VSWR tolerance VDD=15.2V,Po=70W(PinControl)
f=175MHz,Idq=2.0A,Zg=50Ω
LoadVSWR=20:1(All phase)
No destroy -
Load VSWR tolerance VDD=15.2V,Po=50W(PinControl)
f=520MHz,Idq=2.0A,Zg=50Ω
Load VSWR=20:1(All phase)
No destroy -
