Transistors - RF, Mosfets, Misc.
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SD1487 Solid State Scientific Transistor 100w 30 MHz (Pull)
$35.91 -
SRF3800 Motorola Transistor 12 volt (Selected MRF492) (Pull)
$73.91 -
MRF648 / M1160 Motorola NPN Silicon RF Power Transistor 12.5V 470 MHz 60W (Pull)
$36.91Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
- Specified 12.5 Volt, 470 MHz Characteristics — Output Power = 60 Watts, Minimum Gain = 4.4 dB, Efficiency = 55%
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Built–In Matching Network for Broadband Operation
- Scoped and tested to meet specifications
Used * No longer available for export
MFR: Motorola
SKU: MRF648-P -
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MRF450 Motorola NPN Silicon Power Transistor 50W 30 MHz 12.5V (Pull)
$29.91 -
MRF492 Motorola NPN Silicon RF Power Transistor 50 MHz 70W 12.5V Mixed lots (Pull)
$39.91Designed for 12.5 volt low band VHF large-signal power amplifier applications in commercial and industrial FM equipment.
- Specified 12.5 V, 50 MHz Characteristics: Output Power= 70 W, Minimum gain= 11 dB, Efficiency= 50%
- limited Stock on hand, misc. mixed lot / DC and beta code
Used * No longer available for export
MFR: Motorola
SKU: MRF492-P -
MRF454 Motorola NPN Silicon Power Transistor 80W 30MHz 12.5V (Pull)
$86.91 -
MRF412 Motorola NPN Silicon RF Power Transistor 70W (PEP or CW) 30 MHz 13.6V (Pull)
$29.91Designed primarily for applications as a high-power amplifier from 2.0 to 30 MHz, in single sideband mobile, marine, and base station equipment where superior riggedness is required.
- Specified 13.6 Volt, 30 MHz Characteristics- Output Power= 70 W (PEP or CW), Minimum Gain= 13 dB, Efficiency= 40%, Intermodulation Distortion d3 = 0-33 dB Typ
Used * No longer available for export
MFR: Motorola
SKU: MRF412-P -
MRF421 Motorola MRF421 NPN Silicon Power Transistor 100W (PEP) 30 MHz 12V (Pull)
$82.91Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
Used * No longer available for export
MFR: Motorola
SKU: MRF421-MOT-P -
2SC2782A Toshiba NPN Silicon Epitaxial Planar Transistor (Pull)
$49.91The 2SC2782A is an NPN bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a silicon epitaxial planar transistor that is commonly used in various electronic applications, particularly in high-frequency and high-power amplifier circuits.
The 2SC2782A transistor is a high-quality and reliable component that offers excellent performance in a wide range of electronic applications. Its high current gain, low noise figure, high cutoff frequency, and low parasitic capacitance make it a popular choice for use in various high-frequency and high-power amplifier circuits.
Used * No longer available for export
MFR: Toshiba
Made in Japan
SKU: 2SC2782A-P
