Transistors - RF, Mosfets, Misc.

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M2530 Motorola Transistor, M25C30 commercial

$40.00
Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz.

Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics
Output Power = 50 Watts

Minimum Gain = 5.2 dB @ 440, 470 MHz

Efficiency = 55% @ 440, 470 MHz

IRL = 10dB

MFR: Motorola

SKU: M25C30

New Old Stock, No longer available for Export
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MRF177 M/A-COM RF MOSFET Transistor 100W 400MHz 28V

$89.91 As low as: $85.41
Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. N–Channel enhancement mode MOSFET.
- Typical performance at 400 MHz, 28 V: Output power — 100 W, Gain — 12 dB, Efficiency — 60%
- Low thermal resistance
- Low Crss — 10 pF typ. @ VDS = 28 V
- Ruggedness tested at rated output power
- Nitride passivated die for enhanced reliability
- Excellent thermal stability; suited for Class A operation
MRF: M/A-COM
SKU: MRF177-MA
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MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET

$118.91

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

• Enhanced thermal performance
• Higher power dissipation Guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40% Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability

MFR: M/A-COM
SKU: MRF151A-MA
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MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

$307.91
TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase angles

Applications
- Aerospace and Defense
- ISM
MFR: M/A-COM
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MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)

$153.91
TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase angles

Applications
- Aerospace and Defense
- ISM
MFR: M/A-COM
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MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V

$76.91
MRF150 RF Power FET Transistor 150W to 150MHz 50V M/A-COM

TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase angles

Applications
- Aerospace and Defense
- ISM
SKU: MRF150-MA
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MRF148A M/A-COM Linear RF Power FET 30W 175MHz 50V (NOS)

$63.91 As low as: $60.71

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz.

New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF148A-MA
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MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V

$69.91 As low as: $64.95
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers.
- Guaranteed performance at 30 MHz, 28V: Output power: 150W Gain: 8dB (22dB Typ.) Efficiency: 40%
- Typical Performance at 175MHz, 50V: Output Power: 150 W Gain: 13 dB
- Low thermal resistance
- Ruggedness tested at rated output power
- Nitride passivated die for enhanced reliability
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF141-MA
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MRF141G M/A-COM Transistor RF Power FET 300W 175MHz 28V

$265.91

MRF141G Transistor, RF Power FET, 300W, 175MHz, 28V, MFR: M/A-COM No longer available for Export, (NOS)
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MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (2)

$249.91
Made with original Motorola Die

Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode
- Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40% (Typ.)
- Superior high order IMD
- MD(d3) (150 W PEP): –30 dB (Typ.)
- IMD(d11) (150 W PEP): –60 dB (Typ.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: M/A-COM
SKU: MRF140-MP-MA
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Transistors - RF, Mosfets, Misc.

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