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  1. MRF140 M/A-COM Transistor 150W 28V 150 MHz

    MRF140 M/A-COM Transistor 150W 28V 150 MHz

    $125.91

    Made with original Motorola Die

    Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode

    • Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)
    • Superior high order IMD
    • MD(d3) (150 W PEP): –30 dB (Typ.)
    • IMD(d11) (150 W PEP): –60 dB (Typ.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: M/A-COM
    SKU: MRF140-MA

  2. MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V

    MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V

    $119.91 As low as: $113.91

    Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: MA/COM

  3. MRF166W M/A-COM Transistor RF MOSFET 40W 500MHz 28V

    MRF166W M/A-COM Transistor RF MOSFET 40W 500MHz 28V

    $109.91 As low as: $99.19

    Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz, N–Channel enhancement mode MOSFET

    MFR: M/A-COM
    SKU: MRF166W-MA

  4. MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V

    MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V

    $109.91

    Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Min Frequency: 1 MHz
    • Gain: 10 dB
    • Bias Voltage: 12.5 V
    • Max Frequency: 30 MHz
    • Efficiency: 40 %
    • Pout: 100 W

    MFR: M/A-COM
    SKU: MRF421-MA

  5. MRF323 M/A-COM Transistor 20 watt 28v 400 MHz

    MRF323 M/A-COM Transistor 20 watt 28v 400 MHz

    $107.91

    Made with original Motorola Die

    • Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range.
    • Guaranteed performance at 400 MHz, 28 V: Output power = 20 W, Power gain = 10 dB min., Efficiency = 50% min.
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability
    • Computer–controlled wirebonding gives consistent input impedance

    MFR: M/A-COM
    SKU: MRF323-MA

  6. MRF392 M/A-COM Controlled “Q” Broadband Power Transistor 125W 30 to 500MHz 28V

    MRF392 M/A-COM Controlled “Q” Broadband Power Transistor 125W 30 to 500MHz 28V

    $106.91 As low as: $96.91

    Made with original Motorola Die

    Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.

    • Specified 28 V, 400 MHz characteristics — Output power = 125 W, Typical gain = 10 dB, Efficiency = 55% (typ.)
    • Built–in input impedance matching networks for broadband operation
    • Push–pull configuration reduces even numbered harmonics
    • Gold metallization system for high reliability
    • 100% tested for load mismatch

    MRF: M/A-COM
    SKU: MRF392-MA

  7. MRF429 M/A-COM NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V

    MRF429 M/A-COM NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V

    $105.91

    Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    MFR: M/A-COM
    SKU: MRF429-MA

  8. MRF321 M/A-COM NPN Silicon Power Transistor 10W 400MHz 28V (NOS)

    MRF321 M/A-COM NPN Silicon Power Transistor 10W 400MHz 28V (NOS)

    $103.91 As low as: $72.95

    Made with original Motorola Die

    Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.

    • Guaranteed performance at 400 MHz, 28 Vdc; Output power = 10 W, Power gain = 12 dB min., Efficiency = 50% min.
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability
    • Computer–controlled wirebonding gives consistent input Impedance

    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF321-MA

  9. MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz Matched Pair (2)

    MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz Matched Pair (2)

    $97.91

    Out of stock

    Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode MOSFET

    MRF:  M/A-COM
    SKU: MRF173MP-MA

  10. MRF314 M/A-COM NPN Silicon Power Transistor 30W 30-200MHz 28V Matched Pair (2)

    MRF314 M/A-COM NPN Silicon Power Transistor 30W 30-200MHz 28V Matched Pair (2)

    $97.91

    Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range.

    • Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability applications

    MRF: MA/COM
    SKU: MRF314MP-MA

Items 21 to 30 of 48 total

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