Transistors - RF, Mosfets, Misc.
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MRF428 Motorola NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V (NOS)
$134.91Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz Characteristics — Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
- Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF428-MOT -
MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V
$128.91 As low as: $122.46Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz Characteristics — Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
- Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW
MRF: M/A-COM
SKU: MRF428-MA -
MRF492A Motorola NPN Silicon RF Power Transistor Stud Mount 50 MHz 70W 12.5V (NOS)
$128.91 -
MRF275L M/A-COM RF MOSFET Transistor 100W 500MHz 28V
$127.91 As low as: $121.51Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode
- Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 100 W, Power gain — 8.8 dB typ., Efficiency — 55% typ.
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 17 pF typ. @ VDS = 28 V
MFR: M/A-COM
SKU: MRF275L-MA -
MRF140 M/A-COM Transistor 150W 28V 150 MHz
$125.91Made with original Motorola Die
Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode
- Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40% (Typ.)
- Superior high order IMD
- MD(d3) (150 W PEP): –30 dB (Typ.)
- IMD(d11) (150 W PEP): –60 dB (Typ.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: M/A-COM
SKU: MRF140-MA -
MRF497 Motorola NPN Silicon RF Power Transistor 40W 50 MHz 12V Matched Pair (2) (NOS)
$125.91Out of stock
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SRF3795 Motorola 12V Transistor Premium Grade Replacement for the MRF454 Matched Pair (2) (NOS)
$123.91 -
MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V
$119.91 As low as: $113.91Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: MA/COM
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MRF323 Motorola Transistor 20W 28V 400 MHz (NOS)
$119.91- Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 V: Output power = 20 W, Power gain = 10 dB min., Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input impedance
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF323-MOT -
MRF460 Motorola NPN Silicon Power Transistor 40W (PEP) 30 MHz 12.5V Matched Quad (4) (NOS)
$119.91Designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 240 W (PEP), Minimum gain = 12 dB, Efficiency = 40%
- Intermodulation distortion at rated power output —IMD = –30 dB (max)
- Isothermal-Resister Design Results in Rugged Device
- Replacement for 2N6368
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF460MQ