Transistors - RF, Mosfets, Misc.

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

• Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`
• 100% ruggedness tested at rated output power
• Low thermal resistance
• Low Crss — 20 pF typ @ VDS = 28 V

MRF: M/A-COM
SKU: MRF175GU-MA

Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. N–Channel enhancement mode MOSFET.

• Typical performance at 400 MHz, 28 V: Output power — 100 W, Gain — 12 dB, Efficiency — 60%
• Low thermal resistance
• Low Crss — 10 pF typ. @ VDS = 28 V
• Ruggedness tested at rated output power
• Nitride passivated die for enhanced reliability
• Excellent thermal stability; suited for Class A operation

MRF:  M/A-COM
SKU: MRF177-MA

TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

• Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
• Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
• 100% tested for load mismatch at all phase angles

Applications

• Aerospace and Defense
• ISM 

MFR: M/A-COM
SKU:MRF150-MA-MP

 Designed primarily for wideband large–signal output and driver from 30–500MHz, N–Channel enhancement mode MOSFET

• MRF166C — Guaranteed performance at 500 MHz, 28 Vdc, Output power = 20 W, Gain = 13.5 dB, Efficiency = 50%
• Replacement for industry standards such as MRF136, V2820, BLF244, SD1902, and ST1001
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Facilitates manual gain control, ALC and modulation techniques
• Excellent thermal stability, ideally suited for Class A operation
• Low Crss — 4.0 pF @ VDS = 28 V

MFR: M/A-COM
SKU: MRF166C-MA

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode MOSFET

MRF:  M/A-COM
SKU: MRF173MP-MA

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

MFR: M/A-COM
SKU: MRF176GU-MA

Made with original Motorola Die

Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode

• Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)
• Superior high order IMD
• MD(d3) (150 W PEP): –30 dB (Typ.)
• IMD(d11) (150 W PEP): –60 dB (Typ.)
• 100% tested for load mismatch at all phase angles with 30:1 VSWR

MFR: M/A-COM
SKU: MRF140-MA

Designed for wideband large signal amplifier and oscillator  applications to 500MHz  N–Channel enhancement mode

• Guaranteed 28 volt, 500 MHz performance  Output power = 2.0 watts  Minimum gain = 16 dB (Min.)  Efficiency = 55% (Typ.)
• Facilitates manual gain control, ALC and modulation techniques
• Tested for load mismatch at all phase angles with 30:1 VSWR
• Excellent thermal stability and ideally suited for Class A operation

MFR: M/A-COM
SKU: MRF158-MA

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.  N–Channel enhancement mode MOSFET.

MRF: M/A-COM
SKU: MRF173CQ-MA