Transistors - RF, Mosfets, Misc.

Designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment.

• High Common Emitter Power Gain
• Specified 12.5 V, 175 MHz Performance: Output Power = 30 Watts, Power Gain = 10 dB, Efficiency = 60%
• Diffused Emitter Resistor Ballasting
• Characterized to 220 MHz
• Load Mismatch at High Line and Overdrive Conditions

New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF1946

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

MFR: M/A-COM
SKU: MRF176GU-MA

Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz, N–Channel enhancement mode MOSFET

MFR: M/A-COM
SKU: MRF166W-MA

Designed primarily for wideband large–signal output and driver stages from 30–200 MHz, N–Channel enhancement mode MOSFET

• Guaranteed performance at 150 MHz, 28 Vdc, Output power = 45 W, Power gain = 17 dB (min), Efficiency = 60% (min)
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniques
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Low Crss – 8 pF @ VDS = 28 V
• Gold top metal, Typical data for power amplifier applications in industrial, commercial and amateur radio equipment
• Typical performance at 30 MHz, 28 Vdc, Output power = 30 W (PEP), Power gain = 20 dB (typ.), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (typ.)

Parts we have available are early version just after Motorola sold to M/A-COM.  All parts in stock are produced with original Motorola die. 

New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF171A-MA

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.  N–Channel enhancement mode MOSFET.

MRF: M/A-COM
SKU: MRF173CQ-MA

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.

MFR: M/A-COM
SKU: MRF173-MA

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode MOSFET

MRF:  M/A-COM
SKU: MRF173MP-MA

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

• Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`
• 100% ruggedness tested at rated output power
• Low thermal resistance
• Low Crss — 20 pF typ @ VDS = 28 V

MRF: M/A-COM
SKU: MRF175GU-MA

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

• Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix),
• Output power — 200 W, Power gain — 14 dB typical, Efficiency — 65% typical
• 100% ruggedness tested at rated output power
• Low thermal resistance
• Low Crss — 20 pF typical @ VDS = 28 V

New Old Stock * No longer available for export 
MFR: M/A-COM
SKU: MRF175GV-MA