Transistors - RF, Mosfets, Misc.
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MRF164W Motorola Power Field Effect Transistor 28 Volt (NOS)
$69.91Designed primarily for wideband large-scale output and driver stages to 500MHz.
- Guaranteed Performance at 400 MHZ, 28 Vdc
- Output Power: 20 W
- Minimum Gain: 15dB
- Push-Pull Configuration Reduces Even Bumbered Harmonics
- Excellent Thermal Stability, suited for Class A Operation
- Allows Manual Gain Control, ALC and Modulation Techniques
- 30:1 VSWR
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF164W -
MRF158 M/A-COM Transistor 2 watt 28 500 MHz (NOS)
$35.91 As low as: $31.91Designed for wideband large signal amplifier and oscillator applications to 500MHz N–Channel enhancement mode
- Guaranteed 28 volt, 500 MHz performance Output power = 2.0 watts Minimum gain = 16 dB (Min.) Efficiency = 55% (Typ.)
- Facilitates manual gain control, ALC and modulation techniques
- Tested for load mismatch at all phase angles with 30:1 VSWR
- Excellent thermal stability and ideally suited for Class A operation
MFR: M/A-COM
SKU: MRF158-MA -
MRF151G Motorola M/A-COM MOSFET Power Transistor 300W 50V 175 MHz Early Version (NOS)
$179.91The MRF151G MA/COM Transistor is an early version, produced with the Motorola die.
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
New Old Stock * No longer available for export
MFR: Motorola M/A-COM USA
SKU: MRF151G-MA-M -
MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET
$118.91Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
• Enhanced thermal performance
• Higher power dissipation Guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40% Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced ReliabilityMFR: M/A-COM
SKU: MRF151A-MA -
MRF1150MA Motorola Microwave Pulse Power Transistor 150W 50V 1090 MHz (NOS)
$39.91 -
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)
$161.91TMOS Designed primarily for linear large-signal output stages up to 150 MHz.
• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
MFR: M/A-COM
SKU:MRF150-MA-MP -
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V
$80.91MRF150 RF Power FET Transistor 150W to 150MHz 50V M/A-COMTMOS Designed primarily for linear large-signal output stages up to 150 MHz.• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
SKU: MRF150-MA
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MRF148A M/A-COM Linear RF Power FET 30W 175MHz 50V (NOS)
$63.91 As low as: $60.71 -
MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V
$69.91 As low as: $64.95Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers.
- Guaranteed performance at 30 MHz, 28V: Output power: 150W Gain: 8dB (22dB Typ.) Efficiency: 40%
- Typical Performance at 175MHz, 50V: Output Power: 150 W Gain: 13 dB
- Low thermal resistance
- Ruggedness tested at rated output power
- Nitride passivated die for enhanced reliability
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF141-MA -
MRF160 M/A-COM RF MOSFET Broadband Power FET 4W to 500MHz 28V
$46.91 As low as: $44.56Designed primarily for wideband large–signal output and driver from 30–500 MHz.
N–Channel enhancement mode MOSFET- Guaranteed 28 V, 500 MHz performance Output power = 4.0 W Gain = 16 dB (min.) Efficiency = 55% (typ.)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% Tested for load mismatch at all phase angles with 30:1 VSWR
- Low Crss – 0.8 pF Typical at VDS = 28 V
MFR: M/A-COM
SKU: MRF160-MA