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Transistors - RF, Mosfets, Misc.

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  1. MRF164W Motorola Power Field Effect Transistor 28 Volt (NOS)

    MRF164W Motorola Power Field Effect Transistor 28 Volt (NOS)

    $69.91

    Designed primarily for wideband large-scale output and driver stages to 500MHz.

    • Guaranteed Performance at 400 MHZ, 28 Vdc
    • Output Power: 20 W
    • Minimum Gain: 15dB
    • Push-Pull Configuration Reduces Even Bumbered Harmonics
    • Excellent Thermal Stability, suited for Class A Operation
    • Allows Manual Gain Control, ALC and Modulation Techniques
    • 30:1 VSWR

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF164W

  2. MRF158 M/A-COM Transistor 2 watt 28 500 MHz (NOS)

    MRF158 M/A-COM Transistor 2 watt 28 500 MHz (NOS)

    Designed for wideband large signal amplifier and oscillator  applications to 500MHz  N–Channel enhancement mode

    • Guaranteed 28 volt, 500 MHz performance  Output power = 2.0 watts  Minimum gain = 16 dB (Min.)  Efficiency = 55% (Typ.)
    • Facilitates manual gain control, ALC and modulation techniques
    • Tested for load mismatch at all phase angles with 30:1 VSWR
    • Excellent thermal stability and ideally suited for Class A operation

    MFR: M/A-COM
    SKU: MRF158-MA

  3. MRF151G Motorola M/A-COM MOSFET Power Transistor 300W 50V 175 MHz Early Version (NOS)

    MRF151G Motorola M/A-COM MOSFET Power Transistor 300W 50V 175 MHz Early Version (NOS)

    $179.91

    The MRF151G MA/COM Transistor is an early version, produced with the Motorola die.

    Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

    New Old Stock * No longer available for export
    MFR: Motorola M/A-COM USA
    SKU: MRF151G-MA-M

  4. MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET

    MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET

    $118.91

    Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

    • Enhanced thermal performance
    • Higher power dissipation  Guaranteed Performance at 30 MHz, 50 V:
    • Output Power — 150 W
    • Gain — 18 dB (22 dB Typ)
    • Efficiency — 40%  Typical Performance at 175 MHz, 50 V:
    • Output Power — 150 W
    • Gain — 13 dB
    • Low Thermal Resistance
    • Ruggedness Tested at Rated Output Power
    • Nitride Passivated Die for Enhanced Reliability

    MFR: M/A-COM
    SKU: MRF151A-MA

  5. MRF1150MA Motorola Microwave Pulse Power Transistor 150W 50V 1090 MHz (NOS)

    MRF1150MA Motorola Microwave Pulse Power Transistor 150W 50V 1090 MHz (NOS)

    $39.91

    Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters.

    • Guaranteed Performance @ 1090 MHz, 50 Vdc: Output Power = 150 Watts Peak, Minimum Gain = 7.8 dB

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF1150MA

  6. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)

    $161.91

    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    MFR: M/A-COM
    SKU:MRF150-MA-MP

  7. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V

    $80.91

    MRF150 RF Power FET Transistor 150W to 150MHz 50V M/A-COM
    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    SKU: MRF150-MA

  8. MRF148A M/A-COM Linear RF Power FET 30W 175MHz 50V (NOS)

    MRF148A M/A-COM Linear RF Power FET 30W 175MHz 50V (NOS)

    Designed for power amplifier applications in industrial,  commercial and amateur radio equipment to 175MHz.

    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF148A-MA

  9. MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V

    MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V

    Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high  gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency  band solid state transmitters and amplifiers.

    • Guaranteed performance at 30 MHz, 28V:  Output power: 150W  Gain: 8dB (22dB Typ.)  Efficiency: 40%
    • Typical Performance at 175MHz, 50V:  Output Power: 150 W  Gain: 13 dB
    • Low thermal resistance
    • Ruggedness tested at rated output power
    • Nitride passivated die for enhanced reliability

    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF141-MA

  10. MRF160 M/A-COM  RF MOSFET Broadband Power FET 4W to 500MHz 28V

    MRF160 M/A-COM RF MOSFET Broadband Power FET 4W to 500MHz 28V

    Designed primarily for wideband large–signal output and driver from 30–500 MHz.
    N–Channel enhancement mode MOSFET

    • Guaranteed 28 V, 500 MHz performance  Output power = 4.0 W  Gain = 16 dB (min.)  Efficiency = 55% (typ.)
    • Excellent thermal stability, ideally suited for Class A operation
    • Facilitates manual gain control, ALC and modulation techniques
    • 100% Tested for load mismatch at all phase angles with 30:1 VSWR
    • Low Crss – 0.8 pF Typical at VDS = 28 V

    MFR: M/A-COM
    SKU: MRF160-MA

Items 11 to 20 of 397 total

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