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Transistors - RF, Mosfets, Misc.

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  1. MRF137 M/A-COM Transistor 30W 28V 400 MHz (NOS)

    MRF137 M/A-COM Transistor 30W 28V 400 MHz (NOS)

    $47.91

    Designed for wideband large signal output and drive stages Product Image  up to 400 MHz range.  N–Channel enhancement mode

    • Guaranteed 28 V, 150 MHz performance  Output power = 30 W  Minimum gain = 13 dB  Efficiency — 60% (Typical)
    • Small– and large–signal characterization
    • Typical performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Low noise figure — 1.5 dB (typ.) at 1.0 A, 150 MHz
    • Excellent thermal stability, ideally suited for Class A operation
    • Facilitates manual gain control, ALC and modulation techniques

    Limit, 10 per customer.

    New Old Stock * No longer available for export

    MFR: Mitsubishi, Japan

  2. MRF140 M/A-COM Transistor 150W 28V 150 MHz (NOS)

    MRF140 M/A-COM Transistor 150W 28V 150 MHz (NOS)

    $125.91

    Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode
    • Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40% (Typ.)
    • Superior high order IMD
    • IMD(d3) (150 W PEP): –30 dB (Typ.)
    • IMD(d11) (150 W PEP): –60 dB (Typ.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    New Old Stock * No longer available for export.
    MFR: M/A-COM
    SKU: MRF140-MA

  3. MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (NOS)

    MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (NOS)

    $249.91

    Specified 150 Watts, 28 Volts, 30 MHz
    Characteristics Output power = 150 Watts Power Gain = 15 dB (Typ.) Efficiency = 40% (Typ.)
    Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode
    • Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40% (Typ.)
    • Superior high order IMD
    • IMD(d3) (150 W PEP): –30 dB (Typ.)
    • IMD(d11) (150 W PEP): –60 dB (Typ.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF140-MP-MA

  4. MRF141G Transistor, RF Power FET, 300W, 175MHz, 28V, M/A-COM

    MRF141G Transistor, RF Power FET, 300W, 175MHz, 28V, M/A-COM

    $169.95

    MRF141G Transistor, RF Power FET, 300W, 175MHz, 28V, MFR: M/A-COM  No longer available for Export, (NOS)

  5. MRF141 Transistor, RF Power FET, 150W, 175MHz, 28V, M/A-COM

    MRF141 Transistor, RF Power FET, 150W, 175MHz, 28V, M/A-COM

    MRF141 RF Power FET 150W, 175MHz, 28V, MFR: M/A-COM  No longer available for Export, (NOS)

  6. MRF160 Transistor, RF MOSFET: Broadband Power FET 4W, to 500MHz, 28V, M/A-COM

    MRF160 Transistor, RF MOSFET: Broadband Power FET 4W, to 500MHz, 28V, M/A-COM

    MRF160 RF MOSFET: Broadband Power FET 4W, to 500MHz, 28V, MFR: M/A-COM  No longer available for Export, (NOS)

  7. MRF158 M/A-COM Transistor 2 watt 28 500 MHz (NOS)

    MRF158 M/A-COM Transistor 2 watt 28 500 MHz (NOS)

    Designed for wideband large signal amplifier and oscillator  applications to 500MHz  N–Channel enhancement mode

    • Guaranteed 28 volt, 500 MHz performance  Output power = 2.0 watts  Minimum gain = 16 dB (Min.)  Efficiency = 55% (Typ.)

    • Facilitates manual gain control, ALC and modulation techniques
    • Tested for load mismatch at all phase angles with 30:1 VSWR
    • Excellent thermal stability and ideally suited for Class A operation

    New Old Stock * No longer available for export

    MFR: M/A-COM

    SKU: MRF158-MA

  8. MRF154 Transistor, Broadband RF Power MOSFET 600W, to 80MHz, 50V, M/A-COM

    MRF154 Transistor, Broadband RF Power MOSFET 600W, to 80MHz, 50V, M/A-COM

    $456.95

    MRF154 Broadband RF Power MOSFET 600W, to 80MHz, 50V, MFR: M/A-COM  No longer available for Export, (NOS)

  9. MRF151 M/A-COM MOSFET Power Transistor 150W 50V 175 MHz Matched Pair (2) NOS

    MRF151 M/A-COM MOSFET Power Transistor 150W 50V 175 MHz Matched Pair (2) NOS

    $271.91

    MRF151 RF Power Field-Effect Transistor, Matched Pair, 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET

    New Old Stock * No longer available for export

    MFR: M/A-COM

    MRF151MP-MA

  10. MRF151 M/A-COM MOSFET Power Transistor 150W 50V 175 MHz (NOS)

    MRF151 M/A-COM MOSFET Power Transistor 150W 50V 175 MHz (NOS)

    $135.91

    Features guaranteed Performance at 30 MHz, 50 V:

    • Output Power — 150 W
    • Gain — 18 dB (22 dB Typ)
    • Efficiency — 40%
    Typical Performance at 175 MHz, 50 V:
    • Output Power — 150 W
    • Gain — 13 dB
    • Low Thermal Resistance
    • Ruggedness Tested at Rated Output Power
    • Nitride Passivated Die for Enhanced Reliability

    Description and Applications:
    Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

    MFR: M/A-COM

    SKU: MRF151-MA

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