Transistors - RF, Mosfets, Misc.

Designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range.

• Guaranteed performance at 150 MHz, 28 Vdc: Output power = 100 W, Minimum gain = 9.0 dB
• Built–in matching network for broadband operation
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Gold metallization system for high reliability
• High output saturation power — ideally suited for 30 W carrier/120 W
• Peak AM amplifier service
• Guaranteed performance in broadband test fixture

MFR: M/A-COM
SKU: MRF317-MA

Made with original Motorola Die

Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.

• Guaranteed performance at 400 MHz, 28 Vdc
• Output power = 10 W
• Power gain = 12 dB min.
• Efficiency = 50% min.
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Gold metallization system for high reliability
• Computer–controlled wirebonding gives consistent input Impedance

MRF: M/A-COM
SKU: MRF134-MA

Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. N–Channel enhancement mode MOSFET.

• Typical performance at 400 MHz, 28 V: Output power — 100 W, Gain — 12 dB, Efficiency — 60%
• Low thermal resistance
• Low Crss — 10 pF typ. @ VDS = 28 V
• Ruggedness tested at rated output power
• Nitride passivated die for enhanced reliability
• Excellent thermal stability; suited for Class A operation

MRF:  M/A-COM
SKU: MRF177-MA

Made with original Motorola Die

Designed for wideband large signal amplifier and oscillator applications  Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode

MFR: M/A-COM
SKU: MRF136Y-MA

2N6439 MACOM RF Line NPN Silicon Power Transistor 60W, 225 to 400MHz, 28V

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz.

•  Specified 12.5 V, 30 MHz characteristics
•  Output power = 80 W
•  Minimum gain = 12 dB
•  Efficiency = 50%

MFR: M/A-COM
SKU: MRF454-MA

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode

New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF175LU-MA

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.  N–Channel enhancement mode MOSFET.

MRF: M/A-COM
SKU: MRF173CQ-MA

Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range, N–Channel enhancement mode MOSFET

• Guaranteed performance at 150 MHz, 28 Vdc, Output power = 125 W, Minimum gain = 9.0 dB, Efficiency = 50% (min.)
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniques
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Low noise figure — 3.0 dB typ. at 2.0 A, 150 MHz

MFR: M/A-COM
SKU: MRF174-MA