Transistors - RF, Mosfets, Misc.
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MRF454 Motorola NPN Silicon Power Transistor 80W 30MHz 12.5V (Pull)
$39.90 -
MRF412 Motorola NPN Silicon RF Power Transistor 70W (PEP or CW) 30 MHz 13.6V (Pull)
$22.90Designed primarily for applications as a high-power amplifier from 2.0 to 30 MHz, in single sideband mobile, marine, and base station equipment where superior riggedness is required.
- Specified 13.6 Volt, 30 MHz Characteristics- Output Power= 70 W (PEP or CW), Minimum Gain= 13 dB, Efficiency= 40%, Intermodulation Distortion d3 = 0-33 dB Typ
Used * No longer available for export
MFR: Motorola
SKU: MRF412-P -
MRF421 Motorola MRF421 NPN Silicon Power Transistor 100W (PEP) 30 MHz 12V (Pull)
$30.90Out of stock
Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
Used * No longer available for export
MFR: Motorola
SKU: MRF421-MOT-P -
2SC2782A Toshiba NPN Silicon Epitaxial Planar Transistor (Pull)
$49.91The 2SC2782A is an NPN bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a silicon epitaxial planar transistor that is commonly used in various electronic applications, particularly in high-frequency and high-power amplifier circuits.
The 2SC2782A transistor is a high-quality and reliable component that offers excellent performance in a wide range of electronic applications. Its high current gain, low noise figure, high cutoff frequency, and low parasitic capacitance make it a popular choice for use in various high-frequency and high-power amplifier circuits.
Used * No longer available for export
MFR: Toshiba
Made in Japan
SKU: 2SC2782A-P -
MRF455 Motorola NPN Silicon Power Transistor 60W 30 MHz 12.5V (Pull)
$29.90 -
MRF476 Motorola NPN Silicon Power Transistor 3.0W 50 MHz 12.5V (Pull)
$25.90 -
TLP635 Toshiba GaAs IRED & Photo-Transistor (NOS)
$3.91 -
RC709DC Raytheon Integrated Circuit Operational Amplifier (NOS)
$2.91- Operating temp range: +0.0 to 70.0 deg celsius
- Maximum power dissipation rating: 670.0 milliwatts
- Time rating per chacteristic: 300.00 nanoseconds nominal propagation delay time, low to high level output
- Voltage rating and type per characteristic: 10.0 volts maximum power source
New Old Stock * New In Box
MFR: Raytheon
SKU: RC709DC -
PN2907A PNP General Purpose Transistor 60V (NOS)
$0.41 -
S100-12 CTC 5 Watt Transistor 1.5-30MHz (Pull)
$19.90