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Transistors - RF, Mosfets, Misc.

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  1. MRF421 Motorola MRF421 NPN Silicon Power Transistor 100W (PEP) 30 MHz 12V (Pull)

    MRF421 Motorola MRF421 NPN Silicon Power Transistor 100W (PEP) 30 MHz 12V (Pull)

    $30.90

    Out of stock

    Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    Used * No longer available for export
    MFR: Motorola
    SKU: MRF421-MOT-P

  2. 2SC2782A Toshiba NPN Silicon Epitaxial Planar Transistor (Pull)

    2SC2782A Toshiba NPN Silicon Epitaxial Planar Transistor (Pull)

    $49.91

    The 2SC2782A is an NPN bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a silicon epitaxial planar transistor that is commonly used in various electronic applications, particularly in high-frequency and high-power amplifier circuits.

    The 2SC2782A transistor is a high-quality and reliable component that offers excellent performance in a wide range of electronic applications. Its high current gain, low noise figure, high cutoff frequency, and low parasitic capacitance make it a popular choice for use in various high-frequency and high-power amplifier circuits.

    Used * No longer available for export
    MFR: Toshiba
    Made in Japan
    SKU: 2SC2782A-P

  3. MRF455 Motorola NPN Silicon Power Transistor 60W 30 MHz 12.5V (Pull)

    MRF455 Motorola NPN Silicon Power Transistor 60W 30 MHz 12.5V (Pull)

    $29.90

    NPN Silicon Power Transistor 60W 30 MHz 12.5V
    Used * No longer available for export
    MFR: Motorola
    SKU: MRF455-MOT-P

  4. MRF476 Motorola NPN Silicon Power Transistor 3.0W 50 MHz 12.5V (Pull)

    MRF476 Motorola NPN Silicon Power Transistor 3.0W 50 MHz 12.5V (Pull)

    $25.90

    NPN Silicon Power Transistor 3.0W 50 MHz 12.5V
    Used * No longer available for export
    MFR: Motorola
    SKU: MRF476-P

  5. TLP635 Toshiba GaAs IRED & Photo-Transistor (NOS)

    TLP635 Toshiba GaAs IRED & Photo-Transistor (NOS)

    $3.91

    A photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

    New Old Stock * No longer available for export
    MFR: Toshiba Electronics
    SKU: TLP635

    Data Sheet

  6. RC709DC Raytheon Integrated Circuit Operational Amplifier (NOS)

    RC709DC Raytheon Integrated Circuit Operational Amplifier (NOS)

    $2.91

    • Operating temp range: +0.0 to 70.0 deg celsius
    • Maximum power dissipation rating: 670.0 milliwatts
    • Time rating per chacteristic: 300.00 nanoseconds nominal propagation delay time, low to high level output
    • Voltage rating and type per characteristic: 10.0 volts maximum power source

    New Old Stock * New In Box
    MFR: Raytheon 
    SKU: RC709DC

  7. PN2907A PNP General Purpose Transistor 60V (NOS)

    PN2907A PNP General Purpose Transistor 60V (NOS)

    $0.41

    This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA.

    New Old Stock
    SKU: PN2907A-UN

  8. S100-12 CTC 5 Watt Transistor 1.5-30MHz (Pull)

    S100-12 CTC 5 Watt Transistor 1.5-30MHz (Pull)

    $19.90

    Designed for common emitter HF, SSB applications from a 12 volt supply. It may be used in  Class A, AB, C. amplifiers.

    Used * No longer available for export
    MFR: CTC
    SKU: S100-12-P

  9. RF2171 Solid State Scientific Transistor (NOS)

    RF2171 Solid State Scientific Transistor (NOS)

    $29.90

    RF2171 Solid State Scientific Transistor (NOS)

    New Old Stock * No longer available for export
    MFR: Solid State Scientific
    SKU: RF2171

  10. MRF422 M/A-COM NPN Silicon Power Transistor Matched Pair 150 W (PEP) 30 MHz 28 V

    MRF422 M/A-COM NPN Silicon Power Transistor Matched Pair 150 W (PEP) 30 MHz 28 V

    $159.90 As low as: $151.80

    Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: MA/COM
    SKU: MRF422-MA-MP

Items 581 to 590 of 1541 total

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