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  1. MRF323 M/A-COM Transistor 20 watt 28v 400 MHz

    MRF323 M/A-COM Transistor 20 watt 28v 400 MHz

    $107.91

    Made with original Motorola Die

    • Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range.
    • Guaranteed performance at 400 MHz, 28 V: Output power = 20 W, Power gain = 10 dB min., Efficiency = 50% min.
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability
    • Computer–controlled wirebonding gives consistent input impedance

    MFR: M/A-COM
    SKU: MRF323-MA

  2. MRF327 M/A-COM Controlled “Q” Broadband Power Transistor, 80W 100 to 500MHz 28V

    MRF327 M/A-COM Controlled “Q” Broadband Power Transistor, 80W 100 to 500MHz 28V

    $48.91 As low as: $46.91

    Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range.

    • Guaranteed performance @ 400 MHz, 28 Vdc; Output power = 80 W over 225 to 400 MHz Band, Minimum gain = 7.3 dB @ 400 MHz
    • Built–in matching network for broadband operation using double match technique
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability applications
    • Characterized for 100 =8 500 MHz

    MRF: M/A-COM
    SKU: MRF327-MA

  3. MRF392 M/A-COM Controlled “Q” Broadband Power Transistor 125W 30 to 500MHz 28V

    MRF392 M/A-COM Controlled “Q” Broadband Power Transistor 125W 30 to 500MHz 28V

    $106.91 As low as: $96.91

    Made with original Motorola Die

    Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.

    • Specified 28 V, 400 MHz characteristics — Output power = 125 W, Typical gain = 10 dB, Efficiency = 55% (typ.)
    • Built–in input impedance matching networks for broadband operation
    • Push–pull configuration reduces even numbered harmonics
    • Gold metallization system for high reliability
    • 100% tested for load mismatch

    MRF: M/A-COM
    SKU: MRF392-MA

  4. MRF422 M/A-COM NPN Silicon Power Transistor Matched Pair 150 W (PEP) 30 MHz 28 V

    MRF422 M/A-COM NPN Silicon Power Transistor Matched Pair 150 W (PEP) 30 MHz 28 V

    $219.91 As low as: $157.91

    Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: MA/COM
    SKU: MRF422-MP-MA

  5. MRF429 M/A-COM NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V

    MRF429 M/A-COM NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V

    $105.91

    Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    MFR: M/A-COM
    SKU: MRF429-MA

  6. MRF455 M/A-COM NPN Silicon Power Transistor 60 Watt 14-30 MHz 12.5v 0.380" Flange

    MRF455 M/A-COM NPN Silicon Power Transistor 60 Watt 14-30 MHz 12.5v 0.380" Flange

    $57.91

    Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 60 W, Minimum gain = 13 dB

    MFR: M/A-COM
    SKU: MRF455-MA

  7. MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V

    MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V

    $109.91

    Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Min Frequency: 1 MHz
    • Gain: 10 dB
    • Bias Voltage: 12.5 V
    • Max Frequency: 30 MHz
    • Efficiency: 40 %
    • Pout: 100 W

    MFR: M/A-COM
    SKU: MRF421-MA

  8. MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)

    MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)

    $219.91

    Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MRF: M/A-COM
    SKU: MRF421MP-MA

  9. MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V

    MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V

    $119.91 As low as: $113.91

    Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: MA/COM

  10. MRF426 M/A-COM NPN Silicon Power Transistor 25 W (PEP) 30 MHz 28 V

    MRF426 M/A-COM NPN Silicon Power Transistor 25 W (PEP) 30 MHz 28 V

    $39.91

    Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.

    • Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
    • Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Class A and AB characterization
    • BLX 13 equivalent

    MFR: M/A-COM
    SKU: MRF426-MA

Items 31 to 40 of 48 total

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