1-800-RFPARTS (1-800-737-2787) 1-760-744-0700 (USA) ORDERS: rfp@rfparts.com 435 S PACIFIC ST SAN MARCOS, CA 92078

Not finding what you are searching for. Try a partial part number.

  • Home /
  • Transistors - RF, Mosfets, Misc.

Transistors - RF, Mosfets, Misc.

Please click on a subcategory.

2N Transistors
2N Transistors		 2SA Transistors
2SA Transistors

2SB Transistors
2SB Transistors

 2SC Transistors
2SC Transistors
 2SD Transistors
2SD Transistors
2SJ-2SK Transistors
2SK Transistors
 3N Transistors
3N Transistors
 3SK Transistors
3SK Transistors
 BLF Transistors
BLF Transistors

 ERF & EN Transistors
ERF Transistors
PT Transistors
PT Transistors
 RD Transistors
RD Transistors
 RFM Transistors
RFM Transistors

 SD Transistors
SD Transistors

 TIP Transistors
TIP Transistors
MRF/SRF/M Series
MRF Transistors
 Misc. Transistors
Misc Transistors
 Thermal Grease
Thermal Grease
 Accessories
Transistor Accessories
 Transistor Books
Transistor Books

MMIC

MMIC

Insulator Kits

INSULATOR KITS

Feedback Mod Kits

Feedback Mod Kits

List  Grid 

per page
Set Descending Direction
  1. MRF323 M/A-COM Transistor 20 watt 28v 400 MHz

    MRF323 M/A-COM Transistor 20 watt 28v 400 MHz

    $107.91

    Made with original Motorola Die

    • Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range.
    • Guaranteed performance at 400 MHz, 28 V: Output power = 20 W, Power gain = 10 dB min., Efficiency = 50% min.
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability
    • Computer–controlled wirebonding gives consistent input impedance

    MFR: M/A-COM
    SKU: MRF323-MA

  2. MRF327 M/A-COM Controlled “Q” Broadband Power Transistor, 80W 100 to 500MHz 28V

    MRF327 M/A-COM Controlled “Q” Broadband Power Transistor, 80W 100 to 500MHz 28V

    $48.91 As low as: $46.91

    Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range.

    • Guaranteed performance @ 400 MHz, 28 Vdc; Output power = 80 W over 225 to 400 MHz Band, Minimum gain = 7.3 dB @ 400 MHz
    • Built–in matching network for broadband operation using double match technique
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability applications
    • Characterized for 100 =8 500 MHz

    MRF: M/A-COM
    SKU: MRF327-MA

  3. MRF392 M/A-COM Controlled “Q” Broadband Power Transistor 125W 30 to 500MHz 28V

    MRF392 M/A-COM Controlled “Q” Broadband Power Transistor 125W 30 to 500MHz 28V

    $106.91 As low as: $96.91

    Made with original Motorola Die

    Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.

    • Specified 28 V, 400 MHz characteristics — Output power = 125 W, Typical gain = 10 dB, Efficiency = 55% (typ.)
    • Built–in input impedance matching networks for broadband operation
    • Push–pull configuration reduces even numbered harmonics
    • Gold metallization system for high reliability
    • 100% tested for load mismatch

    MRF: M/A-COM
    SKU: MRF392-MA

  4. MRF422 M/A-COM NPN Silicon Power Transistor Matched Pair 150 W (PEP) 30 MHz 28 V

    MRF422 M/A-COM NPN Silicon Power Transistor Matched Pair 150 W (PEP) 30 MHz 28 V

    $219.91 As low as: $157.91

    Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: MA/COM
    SKU: MRF422-MA-MP

  5. MRF429 M/A-COM NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V

    MRF429 M/A-COM NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V

    $105.91

    Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    MFR: M/A-COM
    SKU: MRF429-MA

  6. MRF455 M/A-COM NPN Silicon Power Transistor 60 Watt 14-30 MHz 12.5v 0.380" Flange

    MRF455 M/A-COM NPN Silicon Power Transistor 60 Watt 14-30 MHz 12.5v 0.380" Flange

    $57.91

    Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 60 W, Minimum gain = 13 dB

    MFR: M/A-COM
    SKU: MRF455-MA

  7. MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V

    MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V

    $109.91

    Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Min Frequency: 1 MHz
    • Gain: 10 dB
    • Bias Voltage: 12.5 V
    • Max Frequency: 30 MHz
    • Efficiency: 40 %
    • Pout: 100 W

    MFR: M/A-COM
    SKU: MRF421-MA

  8. MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)

    MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)

    $219.91

    Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MRF: M/A-COM
    SKU: MRF421MP-MA

  9. MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V

    MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V

    $109.91 As low as: $103.91

    Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: MA/COM

  10. MRF426 M/A-COM NPN Silicon Power Transistor 25 W (PEP) 30 MHz 28 V

    MRF426 M/A-COM NPN Silicon Power Transistor 25 W (PEP) 30 MHz 28 V

    $39.91

    Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.

    • Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
    • Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Class A and AB characterization
    • BLX 13 equivalent

    MFR: M/A-COM
    SKU: MRF426-MA

Items 31 to 40 of 49 total

Page:
  2. 1
  3. 2
  4. 3
  5. 4
  6. 5
Shop By

Currently Shopping by:

  1. Manufacturer: M/A-COM Remove This Item
Clear All

Shopping Options

Category
  1. 2N
  2. MRF/SRF/M Series
Product Categories
Hours Monday - Friday
7:00 - 3:30 PST

 Celebrating 50 years in business

RF Parts Company

435 S Pacific St
San Marcos, CA, 92078, USA

1-800-RFPARTS (1-800-737-2787)

1-760-744-0700, #1

Minimum Order
  • Fifteen ($15.00), all inclusive.
  • Preferred Payments for Domestic and International Purchases: PayPal, VISA, MasterCard, American Express, Direct Deposit, and Wire Transfer.
  • All checks will be held for clearance. This process takes 5 - 7 business days.

Buy with confidence



© 1998 to RF Parts Company. All Rights Reserved.