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Transistors - RF, Mosfets, Misc.

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  1. MRF174 M/A-COM Transistor RF MOSFET 125W 200MHz

    MRF174 M/A-COM Transistor RF MOSFET 125W 200MHz

    $53.90

    Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range, N–Channel enhancement mode MOSFET

    • Guaranteed performance at 150 MHz, 28 Vdc, Output power = 125 W, Minimum gain = 9.0 dB, Efficiency = 50% (min.)
    • Excellent thermal stability, ideally suited for Class A operation
    • Facilitates manual gain control, ALC and modulation techniques
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Low noise figure — 3.0 dB typ. at 2.0 A, 150 MHz

    MFR: M/A-COM
    SKU: MRF174-MA

  2. MRF175GU M/A-COM Transistor 150 watt 28v 400 MHz

    MRF175GU M/A-COM Transistor 150 watt 28v 400 MHz

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    • Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`
    • 100% ruggedness tested at rated output power
    • Low thermal resistance
    • Low Crss — 20 pF typ @ VDS = 28 V

    MRF: M/A-COM
    SKU: MRF175GU-MA

  3. MRF175GV M/A-COM Transistor 200 watt 28v 225 MHz (NOS)

    MRF175GV M/A-COM Transistor 200 watt 28v 225 MHz (NOS)

    $189.90

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    • Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix),
    • Output power — 200 W, Power gain — 14 dB typical, Efficiency — 65% typical
    • 100% ruggedness tested at rated output power
    • Low thermal resistance
    • Low Crss — 20 pF typical @ VDS = 28 V

    New Old Stock * No longer available for export 
    MFR: M/A-COM
    SKU: MRF175GV-MA

  4. MRF175LU M/A-COM Transistor RF MOSFET 100W 400MHz 28V (NOS)

    MRF175LU M/A-COM Transistor RF MOSFET 100W 400MHz 28V (NOS)

    $74.90

    Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode

    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF175LU-MA

  5. MRF176GU M/A-COM Transistor, RF MOSFET 200/150W 500MHz 50V

    MRF176GU M/A-COM Transistor, RF MOSFET 200/150W 500MHz 50V

    $149.90

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    MFR: M/A-COM
    SKU: MRF176GU-MA

  6. MRF176GV M/A-COM  RF MOSFET Transistor 200/150W 500MHz 50V

    MRF176GV M/A-COM RF MOSFET Transistor 200/150W 500MHz 50V

    $150.90

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    MFR: M/A-COM
    SKU: MRF176GV-MA

  7. MRF177 M/A-COM RF MOSFET Transistor 100W 400MHz 28V

    MRF177 M/A-COM RF MOSFET Transistor 100W 400MHz 28V

    Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. N–Channel enhancement mode MOSFET.

    • Typical performance at 400 MHz, 28 V: Output power — 100 W, Gain — 12 dB, Efficiency — 60%
    • Low thermal resistance
    • Low Crss — 10 pF typ. @ VDS = 28 V
    • Ruggedness tested at rated output power
    • Nitride passivated die for enhanced reliability
    • Excellent thermal stability; suited for Class A operation

    MRF:  M/A-COM
    SKU: MRF177-MA

  8. 2SC908 Mitsubishi RF Power Transistor (NOS)

    2SC908 Mitsubishi RF Power Transistor (NOS)

    $4.91

    A silicon NPN epitaxial planar type transistor designed for idustrial use RF power amplifiers on UHF band mobile radio applications.

    New Old Stock
    MFR: Mitsubishi
    SKU: 2SC908

  9. BFR96 Motorola Transistor (NOS)

    BFR96 Motorola Transistor (NOS)

    $7.95

    BFR96 Motorola Transistor (NOS)

    New Old Stock
    MFR: Motorola
    SKU: BFR96-MOT

  10. D44T8 General Electric Silicon NPN Transistor 25MHz (NOS)

    D44T8 General Electric Silicon NPN Transistor 25MHz (NOS)

    $3.90

    • Maximum Collector-Base Voltage |Vcb|: 400 V
    • Transition Frequency (ft): 25 MHz

    New Old Stock * No longer availble for export
    MFR: General Electric
    SKU: D44T8

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