Transistors - RF, Mosfets, Misc.
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2SC1969 Mitsubishi NPN Epitaxial Planar Transistor 27 MHz 12V 16W (NOS) (SEE MRF475)
$19.95Out of stock
NPN Epitaxial Planar Transistor 27 MHz 12V 16W
TO-220 Case
New Old Stock * No longer available for export
MFR: Mitsubishi (Original)
SKU: 2SC1969NOTE: The 2SC1969 is no longer in production, and no longer available. The MRF475 is a possible substitute. (SEE MRF475)
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2SC1970 Mitsubishi NPN Epitaxial Planar Type Transistor 175 MHz 13.5V 1W (NOS)
$3.91 -
2SC1973 Matsushita NPN Epitaxial Planar Transistor (NOS)
$2.91 -
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MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V
$224.90Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. N-Channel enhancement mode
- Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power gain — 10 dB (min.), Efficiency — 50% (min.)
- 100% tested for load mismatch at all phase angles with VSWR 30:1
- Overall lower capacitance @ 28 V: Ciss — 135 pF, Coss — 140 pF, Crss — 17 pF
- Simplified AVC, ALC and modulation
- Typical data for power amplifiers in industrial and commercial applications:
- Typical performance @ 400 MHz, 28 Vdc: Output power — 150 W, Power gain — 12.5 dB, Efficiency — 60%
- Typical performance @ 225 MHz, 28 Vdc: Output power — 200 W, Power gain — 15 dB, Efficiency — 65%
MRF: M/A-COM
MRF275G-MA -
MRF275L M/A-COM RF MOSFET Transistor 100W 500MHz 28V
$127.90 As low as: $121.51Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode
- Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 100 W, Power gain — 8.8 dB typ., Efficiency — 55% typ.
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 17 pF typ. @ VDS = 28 V
MFR: M/A-COM
SKU: MRF275L-MA -
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J113 Siliconix N-Channel JFET Transistor 35v 625mw
$0.41