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  1. 2SC2936H Transistor, Power Supply, 30a, TO-3, Hitachi

    2SC2936H Transistor, Power Supply, 30a, TO-3, Hitachi

    $11.80

    2SC2936H Transistor, Power Supply, 30a, TO-3, MFR: Hitachi  No longer available for Export, (NOS)

  2. 2SC2954 NPN Silicon Epitaxial Transistor, NEC

    2SC2954 NPN Silicon Epitaxial Transistor, NEC

    $1.91 As low as: $1.54

    2SC2954 Transistor, NPN epitaxial silicon, MFR: NEC  No longer available for Export, (NOS)

  3. 2SC2983 Silicon NPN Epitaxial Type Transistor Transistor, 2SC2983-O

    2SC2983 Silicon NPN Epitaxial Type Transistor Transistor, 2SC2983-O

    $1.65

    2SC2983 Transistor, Silicon NPN Epitaxial Type Transistor  No longer available for Export, (NOS)

  4. 2SC2985 NEC Silicon NPN Transistor (NOS)

    2SC2985 NEC Silicon NPN Transistor (NOS)

    $6.91

    • Applications: UHF, power transistor
    • Uce = 23V
    • Ic = 2A

    New Old Stock * No longer available for export
    MFR: NEC
    SKU: 2SC2985

     

  5. 2SC2988 Matsushita Silicon NPN Transistor (NOS)

    2SC2988 Matsushita Silicon NPN Transistor (NOS)

    $9.91

    New Old Stock *  No longer available for export
    MFR: Matsushita
    SKU: 2SC2988

  6. 2SC2996Y Silicon NPN Epitaxial Type Transistor (NOS)

    2SC2996Y Silicon NPN Epitaxial Type Transistor (NOS)

    $0.91

    • High stability oscillation voltage on FM local oscillator
    • Recommend FM/AM RF, MIX, local and IF

    New Old Stock * No longer available for export 
    SKU: 2SC2996Y

  7. MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V

    MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V

    $75.90

    Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Min Frequency: 1 MHz
    • Gain: 10 dB
    • Bias Voltage: 12.5 V
    • Max Frequency: 30 MHz
    • Efficiency: 40 %
    • Pout: 100 W

    MFR: M/A-COM
    SKU: MRF421-MA

  8. MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)

    MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)

    $151.90

    Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MRF: M/A-COM
    SKU: MRF421MP-MA

  9. MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V

    MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V

    $79.90 As low as: $75.90

    Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: MA/COM

  10. MRF426 M/A-COM NPN Silicon Power Transistor 25 W (PEP) 30 MHz 28 V

    MRF426 M/A-COM NPN Silicon Power Transistor 25 W (PEP) 30 MHz 28 V

    $39.91

    Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.

    • Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
    • Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Class A and AB characterization
    • BLX 13 equivalent

    MFR: M/A-COM
    SKU: MRF426-MA

Items 821 to 830 of 1519 total

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