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MRF/SRF/M Series

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  1. MRF175LU M/A-COM Transistor RF MOSFET 100W 400MHz 28V (NOS)

    MRF175LU M/A-COM Transistor RF MOSFET 100W 400MHz 28V (NOS)

    Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode

    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF175LU-MA

  2. MRF176GU M/A-COM Transistor, RF MOSFET 200/150W 500MHz 50V

    MRF176GU M/A-COM Transistor, RF MOSFET 200/150W 500MHz 50V

    $179.91

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    MFR: M/A-COM
    SKU: MRF176GU-MA

  3. MRF176GV M/A-COM  RF MOSFET Transistor 200/150W 500MHz 50V

    MRF176GV M/A-COM RF MOSFET Transistor 200/150W 500MHz 50V

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    MFR: M/A-COM
    SKU: MRF176GV-MA

  4. MRF148 Motorola RF MOSFET Transistor 30 Watt 30 MHz 50 Volt (NOS)

    MRF148 Motorola RF MOSFET Transistor 30 Watt 30 MHz 50 Volt (NOS)

    $69.91

    N-Channel enhancement-mode RF power field-effect transister designed for power amplifier applications in indistrial, commercial, and amateur radio equipment to 175 MHz.

    • Superior High Order IMD
    • Specified 50 Volts, 30 MHz Charachteristics: Output Power= 30 Watts, Power Gain= 18dB (Typ), Efficiency= 40% (Typ)

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF148

  5. MRF174 M/A-COM Transistor RF MOSFET 125W 200MHz

    MRF174 M/A-COM Transistor RF MOSFET 125W 200MHz

    $63.91

    Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range, N–Channel enhancement mode MOSFET

    • Guaranteed performance at 150 MHz, 28 Vdc, Output power = 125 W, Minimum gain = 9.0 dB, Efficiency = 50% (min.)
    • Excellent thermal stability, ideally suited for Class A operation
    • Facilitates manual gain control, ALC and modulation techniques
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Low noise figure — 3.0 dB typ. at 2.0 A, 150 MHz

    MFR: M/A-COM
    SKU: MRF174-MA

  6. MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz Matched Pair (2)

    MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz Matched Pair (2)

    $97.91

    Out of stock

    Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode MOSFET

    MRF:  M/A-COM
    SKU: MRF173MP-MA

  7. MRF151 RF Power Field-Effect Transistor Matched Pair (2)150 Watt 50 Volt 175 MHz N-Channel Broadband MOSFET

    MRF151 RF Power Field-Effect Transistor Matched Pair (2)150 Watt 50 Volt 175 MHz N-Channel Broadband MOSFET

    $159.91

    Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

    Features guaranteed Performance at 30 MHz, 50 V:

    • Output Power — 150 W
    • Gain — 18 dB (22 dB Typ)
    • Efficiency — 40%
    Typical Performance at 175 MHz, 50 V:
    • Output Power — 150 W
    • Gain — 13 dB
    • Low Thermal Resistance
    • Ruggedness Tested at Rated Output Power
    • Nitride Passivated Die for Enhanced Reliability

    MRF: MA/COM
    SKU: MRF151MP-MA

  8. MRF154 M/A-COM Broadband RF Power MOSFET Transistor 600W to 80MHz 50V

    MRF154 M/A-COM Broadband RF Power MOSFET Transistor 600W to 80MHz 50V

    $869.91

    The MRF154 transistor is commonly used in a variety of RF power amplifier applications, such as in radio and television broadcasting, wireless communication systems, and radar systems. It is also used in industrial applications, such as in welding equipment and plasma generators.

    The MRF154 transistor is a high-quality and reliable component that offers excellent performance in a wide range of RF power applications. Its high power rating, frequency range, and voltage rating make it a popular choice for use in a variety of high-power applications.

    Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range.  
    N–Channel enhancement mode MOSFET.
    Specified 50 volts
    30 MHz characteristics
    Output power = 600 watts  
    Power gain = 17 dB (typical)  
    Efficiency = 45% (typical)

    Not available for export
    MFR: M/A-COM
    SKU: MRF154-MA

  9. MRF158 M/A-COM Transistor 2 watt 28 500 MHz (NOS)

    MRF158 M/A-COM Transistor 2 watt 28 500 MHz (NOS)

    Designed for wideband large signal amplifier and oscillator  applications to 500MHz  N–Channel enhancement mode

    • Guaranteed 28 volt, 500 MHz performance  Output power = 2.0 watts  Minimum gain = 16 dB (Min.)  Efficiency = 55% (Typ.)
    • Facilitates manual gain control, ALC and modulation techniques
    • Tested for load mismatch at all phase angles with 30:1 VSWR
    • Excellent thermal stability and ideally suited for Class A operation

    MFR: M/A-COM
    SKU: MRF158-MA

  10. MRF160 M/A-COM  RF MOSFET Broadband Power FET 4W to 500MHz 28V

    MRF160 M/A-COM RF MOSFET Broadband Power FET 4W to 500MHz 28V

    Designed primarily for wideband large–signal output and driver from 30–500 MHz.
    N–Channel enhancement mode MOSFET

    • Guaranteed 28 V, 500 MHz performance  Output power = 4.0 W  Gain = 16 dB (min.)  Efficiency = 55% (typ.)
    • Excellent thermal stability, ideally suited for Class A operation
    • Facilitates manual gain control, ALC and modulation techniques
    • 100% Tested for load mismatch at all phase angles with 30:1 VSWR
    • Low Crss – 0.8 pF Typical at VDS = 28 V

    MFR: M/A-COM
    SKU: MRF160-MA

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