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MRF/SRF/M Series

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  1. MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)

    MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)

    $219.91

    Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MRF: M/A-COM
    SKU: MRF421MP-MA

  2. MRF175GV M/A-COM Transistor 200 watt 28v 225 MHz (NOS)

    MRF175GV M/A-COM Transistor 200 watt 28v 225 MHz (NOS)

    $215.91

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    • Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix),
    • Output power — 200 W, Power gain — 14 dB typical, Efficiency — 65% typical
    • 100% ruggedness tested at rated output power
    • Low thermal resistance
    • Low Crss — 20 pF typical @ VDS = 28 V

    New Old Stock * No longer available for export 
    MFR: M/A-COM
    SKU: MRF175GV-MA

  3. MRF175GU M/A-COM Transistor 150 watt 28v 400 MHz

    MRF175GU M/A-COM Transistor 150 watt 28v 400 MHz

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    • Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`
    • 100% ruggedness tested at rated output power
    • Low thermal resistance
    • Low Crss — 20 pF typ @ VDS = 28 V

    MRF: M/A-COM
    SKU: MRF175GU-MA

  4. MRF176GU M/A-COM Transistor, RF MOSFET 200/150W 500MHz 50V

    MRF176GU M/A-COM Transistor, RF MOSFET 200/150W 500MHz 50V

    $179.91

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    MFR: M/A-COM
    SKU: MRF176GU-MA

  5. MRF176GV M/A-COM  RF MOSFET Transistor 200/150W 500MHz 50V

    MRF176GV M/A-COM RF MOSFET Transistor 200/150W 500MHz 50V

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    MFR: M/A-COM
    SKU: MRF176GV-MA

  6. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)

    $161.91

    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    MFR: M/A-COM
    SKU:MRF150-MA-MP

  7. MRF454 M/A-COM Power Transistor NPN Silicon Matched Pair (2) 80W 30MHz 12.5V

    MRF454 M/A-COM Power Transistor NPN Silicon Matched Pair (2) 80W 30MHz 12.5V

    $155.91

    Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz.

    •  Specified 12.5 V, 30 MHz characteristics
    •  Output power = 80 W
    •  Minimum gain = 12 dB
    •  Efficiency = 50%

    MFR: M/A-COM
    SKU: MRF454-MA-MP 

  8. MRF448 M/A-COM NPN Silicon Power Transistor 250W 30 MHz 50V

    MRF448 M/A-COM NPN Silicon Power Transistor 250W 30 MHz 50V

    $139.91

    Designed primarily for high–voltage applications as a high–power linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    • Specified 50 V, 30 MHz characteristics: Output power = 250 W, Minimum gain = 12 dB, Efficiency = 45% 
    • Intermodulation distortion @ 250 W (PEP) — IMD = –30 dB (max)
    • 100% tested for load mismatch at all phase angles with 3:1 VSWR

    ROHS Compliant.
    MRF: M/A-COM
    SKU: MRF448-MA

  9. MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V

    MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V

    Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    • Specified 50 V, 30 MHz Characteristics —  Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
    • Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW

    MRF: M/A-COM
    SKU: MRF428-MA

  10. MRF275L M/A-COM RF MOSFET Transistor 100W 500MHz 28V

    MRF275L M/A-COM RF MOSFET Transistor 100W 500MHz 28V

    Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode

    • Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 100 W, Power gain — 8.8 dB typ., Efficiency — 55% typ.
    • 100% ruggedness tested at rated output power
    • Low thermal resistance
    • Low Crss — 17 pF typ. @ VDS = 28 V

    MFR: M/A-COM
    SKU: MRF275L-MA

Items 11 to 20 of 48 total

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