MRF/SRF/M Series
Please choose from the following MRF Sub-Catagory choices:
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MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)
$219.91Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MRF: M/A-COM
SKU: MRF421MP-MA -
MRF175GV M/A-COM Transistor 200 watt 28v 225 MHz (NOS)
$215.91Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
- Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix),
- Output power — 200 W, Power gain — 14 dB typical, Efficiency — 65% typical
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 20 pF typical @ VDS = 28 V
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF175GV-MA -
MRF175GU M/A-COM Transistor 150 watt 28v 400 MHz
$191.91 As low as: $182.31Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
- Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 20 pF typ @ VDS = 28 V
MRF: M/A-COM
SKU: MRF175GU-MA -
MRF176GU M/A-COM Transistor, RF MOSFET 200/150W 500MHz 50V
$179.91Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
MFR: M/A-COM
SKU: MRF176GU-MA -
MRF176GV M/A-COM RF MOSFET Transistor 200/150W 500MHz 50V
$179.91 As low as: $139.95Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
MFR: M/A-COM
SKU: MRF176GV-MA -
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)
$161.91TMOS Designed primarily for linear large-signal output stages up to 150 MHz.
• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
MFR: M/A-COM
SKU:MRF150-MA-MP -
MRF454 M/A-COM Power Transistor NPN Silicon Matched Pair (2) 80W 30MHz 12.5V
$155.91 -
MRF448 M/A-COM NPN Silicon Power Transistor 250W 30 MHz 50V
$139.91Designed primarily for high–voltage applications as a high–power linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz characteristics: Output power = 250 W, Minimum gain = 12 dB, Efficiency = 45%
- Intermodulation distortion @ 250 W (PEP) — IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 3:1 VSWR
ROHS Compliant.
MRF: M/A-COM
SKU: MRF448-MA -
MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V
$128.91 As low as: $122.46Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz Characteristics — Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
- Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW
MRF: M/A-COM
SKU: MRF428-MA -
MRF275L M/A-COM RF MOSFET Transistor 100W 500MHz 28V
$127.91 As low as: $121.51Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode
- Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 100 W, Power gain — 8.8 dB typ., Efficiency — 55% typ.
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 17 pF typ. @ VDS = 28 V
MFR: M/A-COM
SKU: MRF275L-MA