MRF/SRF/M Series
Please choose from the following MRF Sub-Catagory choices:
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MRF497 Motorola NPN Silicon RF Power Transistor 40W 50 MHz 12V (NOS) (Sub for MRF477)
$62.91 -
MRF497 Motorola NPN Silicon RF Power Transistor 40W 50 MHz 12V Matched Pair (2) (NOS)
$125.91 -
MRF448 M/A-COM NPN Silicon Power Transistor 250W 30 MHz 50V Matched Pair (2)
$279.91Designed primarily for high–voltage applications as a high–power linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz characteristics: Output power = 250 W, Minimum gain = 12 dB, Efficiency = 45%
- Intermodulation distortion @ 250 W (PEP) — IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 3:1 VSWR
ROHS Compliant.
MFR: M/A-COM
SKU: MRF448MP-MA -
MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V
$98.90 As low as: $93.95Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz Characteristics — Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
- Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW
MRF: M/A-COM
SKU: MRF428-MA -
SRF3775 Motorola Transistor 75w 12.5v 14-30 MHz 0.380 Flange (MRF455) (NOS)
$29.90 -
MRF426 M/A-COM NPN Silicon Power Transistor Matched Pair 25W (PEP) 30MHz 28V
$79.91Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.
- Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
- Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Class A and AB characterization
- BLX 13 equivalent
MFR: M/A-COM
SKU: MRF426MP-MA -
MRF426 M/A-COM NPN Silicon Power Transistor 25 W (PEP) 30 MHz 28 V
$39.91Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.
- Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
- Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Class A and AB characterization
- BLX 13 equivalent
MFR: M/A-COM
SKU: MRF426-MA -
MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V
$79.90 As low as: $75.90Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: MA/COM
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MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)
$151.90Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MRF: M/A-COM
SKU: MRF421MP-MA -
MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V
$75.90Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Min Frequency: 1 MHz
- Gain: 10 dB
- Bias Voltage: 12.5 V
- Max Frequency: 30 MHz
- Efficiency: 40 %
- Pout: 100 W
MFR: M/A-COM
SKU: MRF421-MA
