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MRF/SRF/M Series

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  1. MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V

    MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V

    Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: MA/COM

  2. MRF453 Motorola NPN Silicon Power Transistor 60W 30 MHz 12.5 V Matched Quad (4) (NOS)

    MRF453 Motorola NPN Silicon Power Transistor 60W 30 MHz 12.5 V Matched Quad (4) (NOS)

    $159.90

    NPN Silicon Power Transistor 60W 30 MHz 12.5V
    Matched Quad (4)
    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF453MQ

  3. MRF429 M/A-COM NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V

    MRF429 M/A-COM NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V

    $64.90

    Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    MFR: M/A-COM
    SKU: MRF429-MA

  4. MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V

    MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V

    Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    • Specified 50 V, 30 MHz Characteristics —  Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
    • Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW

    MRF: M/A-COM
    SKU: MRF428-MA

  5. MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V Matched Quad (4)

    MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V Matched Quad (4)

    $319.90

    Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: M/A-COM
    SKU: MRF422-MA-MQ

  6. MRF420 Motorola  RF Power Transistor 75Watts (PEP) 10dB  12.5 Volts (NOS)

    MRF420 Motorola RF Power Transistor 75Watts (PEP) 10dB 12.5 Volts (NOS)

    $16.91

    RF Power Transistor 75Watts (PEP) 10dB  12.5 Volts (NOS)
    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF420

  7. MRF492 Motorola NPN Silicon RF Power Transistor 50 MHz 70W 12.5V Matched Pair (2) (NOS)

    MRF492 Motorola NPN Silicon RF Power Transistor 50 MHz 70W 12.5V Matched Pair (2) (NOS)

    $105.91

    Designed for 12.5 volt low band VHF large-signal power amplifier applications in commercial and industrial FM equipment.

    • Specified 12.5 V, 50 MHz Characteristics: Output Power= 70 W, Minimum gain= 11 dB, Efficiency= 50%

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF492MP

  8. MRF4427 Microsemi RF & Microwave Discrete Low Power Transistor 20dB 200 MHz (NOS)

    MRF4427 Microsemi RF & Microwave Discrete Low Power Transistor 20dB 200 MHz (NOS)

    $1.90

    Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.

    • Low Cost SO-8 Plastic Surface Mount Package.
    • S-Parameter Characterization
    • Tape and Reel Packaging Options Available
    • Low Voltage Version of MRF3866
    • Maximum Available Gain – 20dB(typ) @ 200MHz

    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF4427-MSC

  9. MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V

    MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V

    $75.90

    Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Min Frequency: 1 MHz
    • Gain: 10 dB
    • Bias Voltage: 12.5 V
    • Max Frequency: 30 MHz
    • Efficiency: 40 %
    • Pout: 100 W

    MFR: M/A-COM
    SKU: MRF421-MA

  10. MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)

    MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)

    $151.90

    Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MRF: M/A-COM
    SKU: MRF421MP-MA

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