MRF400 Series
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MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V
$119.91 As low as: $113.91Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: MA/COM
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MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V
$109.91Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Min Frequency: 1 MHz
- Gain: 10 dB
- Bias Voltage: 12.5 V
- Max Frequency: 30 MHz
- Efficiency: 40 %
- Pout: 100 W
MFR: M/A-COM
SKU: MRF421-MA -
MRF429 M/A-COM NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V
$105.91 -
MRF454 M/A-COM NPN Silicon Power Transistor 80W 30 MHz 12.5V
$77.91 -
MRF455 M/A-COM NPN Silicon Power Transistor 60 Watt 14-30 MHz 12.5v 0.380" Flange
$57.91 -
MRF426 M/A-COM NPN Silicon Power Transistor 25 W (PEP) 30 MHz 28 V
$39.91Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.
- Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
- Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Class A and AB characterization
- BLX 13 equivalent
MFR: M/A-COM
SKU: MRF426-MA
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