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MRF100 Series

MRF163, MRF162, MRF171, MRF1001A, MRF1015MB, MRF1090MA, MRF154MP, MRF166C-MOT, MRF138, MRF1150MB Transistor, 12 volt, MRF157-MOT Transistor, Motorola, 600 watt, 50v, 80 MHz, MRF140-MOT Transistor, 150 watt, 28v, 150 MHz, Motorola, MRF175GV-MA Transistor, 200 watt, 28v, 225 MHz, M/A-COM, MRF151-MOT Transistor, 50 volt motorola, MRF134-MOT Transistor, 28 volt motorola, MRF173-MA Transistor, 80 watt, 28v, 175 MHz, M/A-COM

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  1. MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V

    MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V

    Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high  gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency  band solid state transmitters and amplifiers.

    • Guaranteed performance at 30 MHz, 28V:  Output power: 150W  Gain: 8dB (22dB Typ.)  Efficiency: 40%
    • Typical Performance at 175MHz, 50V:  Output Power: 150 W  Gain: 13 dB
    • Low thermal resistance
    • Ruggedness tested at rated output power
    • Nitride passivated die for enhanced reliability

    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF141-MA

  2. MRF141G M/A-COM RF Power FET 300W 175MHz 28V

    MRF141G M/A-COM RF Power FET 300W 175MHz 28V

    $265.91

    • Ruggedness tested at rated output power
    • Nitride passivated die for enhanced reliability
    • Operating Frequency: 175 MHz
    • Gain: 12 Db
    • Output Power: 300 W

    MFR: MA/COM
    SKU: MRF141G-MA

  3. MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (2)

    MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (2)

    $249.91

    Made with original Motorola Die

    Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode

    • Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)
    • Superior high order IMD
    • MD(d3) (150 W PEP): –30 dB (Typ.)
    • IMD(d11) (150 W PEP): –60 dB (Typ.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: M/A-COM
    SKU: MRF140-MP-MA

  4. MRF140 M/A-COM Transistor 150W 28V 150 MHz

    MRF140 M/A-COM Transistor 150W 28V 150 MHz

    $125.91

    Made with original Motorola Die

    Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode

    • Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)
    • Superior high order IMD
    • MD(d3) (150 W PEP): –30 dB (Typ.)
    • IMD(d11) (150 W PEP): –60 dB (Typ.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: M/A-COM
    SKU: MRF140-MA

  5. MRF137 M/A-COM Transistor 30W 28V 400 MHz

    MRF137 M/A-COM Transistor 30W 28V 400 MHz

    $51.91

    Designed for wideband large signal output and drive stages Product Image  up to 400 MHz range.  N–Channel enhancement mode

    • Guaranteed 28 V, 150 MHz performance  Output power = 30 W  Minimum gain = 13 dB  Efficiency — 60% (Typical)
    • Small– and large–signal characterization
    • Typical performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Low noise figure — 1.5 dB (typ.) at 1.0 A, 150 MHz
    • Excellent thermal stability, ideally suited for Class A operation
    • Facilitates manual gain control, ALC and modulation techniques

    Limit, 10 per customer.

    MFR: M/A-COM

  6. MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz

    MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz

    Made with original Motorola Die

    Designed for wideband large signal amplifier and oscillator applications  Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode

    MFR: M/A-COM
    SKU: MRF136Y-MA

  7. MRF136 M/A-COM Transistor 15 watt 28v 400 MHz

    MRF136 M/A-COM Transistor 15 watt 28v 400 MHz

    Designed for wideband large signal amplifier and oscillator applications  Up to 400 MHz range, in single-ended configuration  N–Channel enhancement mode
    .
    • Guaranteed 28 volt, 150 MHz performance  Output power = 15 watts  Narrowband gain = 16 dB (Typ.)  Efficiency = 60% (Typ.)
    • Small– and large–signal characterization
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Excellent thermal stability, ideally suited for Cass A operation
    • Facilitates manual gain control, ALC and modulation techniques

    MFR: M/A-COM
    SKU: MRF136-MA

  8. MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz

    MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz

    Made with original Motorola Die

    Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.

    • Guaranteed performance at 400 MHz, 28 Vdc
    • Output power = 10 W
    • Power gain = 12 dB min.
    • Efficiency = 50% min.
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability
    • Computer–controlled wirebonding gives consistent input Impedance

    MRF: M/A-COM
    SKU: MRF134-MA

  9. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

    $307.91

    Out of stock

    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    MFR: M/A-COM

  10. MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET

    MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET

    $118.91

    Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

    • Enhanced thermal performance
    • Higher power dissipation  Guaranteed Performance at 30 MHz, 50 V:
    • Output Power — 150 W
    • Gain — 18 dB (22 dB Typ)
    • Efficiency — 40%  Typical Performance at 175 MHz, 50 V:
    • Output Power — 150 W
    • Gain — 13 dB
    • Low Thermal Resistance
    • Ruggedness Tested at Rated Output Power
    • Nitride Passivated Die for Enhanced Reliability

    MFR: M/A-COM
    SKU: MRF151A-MA

Items 31 to 40 of 52 total

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