1-800-RFPARTS (1-800-737-2787) 1-760-744-0700 (USA) ORDERS: rfp@rfparts.com 435 S PACIFIC ST SAN MARCOS, CA 92078

MRF100 Series

MRF163, MRF162, MRF171, MRF1001A, MRF1015MB, MRF1090MA, MRF154MP, MRF166C-MOT, MRF138, MRF1150MB Transistor, 12 volt, MRF157-MOT Transistor, Motorola, 600 watt, 50v, 80 MHz, MRF140-MOT Transistor, 150 watt, 28v, 150 MHz, Motorola, MRF175GV-MA Transistor, 200 watt, 28v, 225 MHz, M/A-COM, MRF151-MOT Transistor, 50 volt motorola, MRF134-MOT Transistor, 28 volt motorola, MRF173-MA Transistor, 80 watt, 28v, 175 MHz, M/A-COM

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  1. MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz

    MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz

    Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.

    MFR: M/A-COM
    SKU: MRF173-MA

  2. MRF173CQ M/A-COM RF MOFSET Transistor 80W 175MHz 28V

    MRF173CQ M/A-COM RF MOFSET Transistor 80W 175MHz 28V

    $69.91

    Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.  N–Channel enhancement mode MOSFET.

    MRF: M/A-COM
    SKU: MRF173CQ-MA

  3. MRF171A  M/A-COM Transistor RF MOSFET 45W 150MHz 28V (NOS)

    MRF171A M/A-COM Transistor RF MOSFET 45W 150MHz 28V (NOS)

    $53.91

    Designed primarily for wideband large–signal output and driver stages from 30–200 MHz, N–Channel enhancement mode MOSFET

    • Guaranteed performance at 150 MHz, 28 Vdc, Output power = 45 W, Power gain = 17 dB (min), Efficiency = 60% (min)
    • Excellent thermal stability, ideally suited for Class A operation
    • Facilitates manual gain control, ALC and modulation techniques
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Low Crss – 8 pF @ VDS = 28 V
    • Gold top metal, Typical data for power amplifier applications in industrial, commercial and amateur radio equipment
    • Typical performance at 30 MHz, 28 Vdc, Output power = 30 W (PEP), Power gain = 20 dB (typ.), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (typ.)

    Parts we have available are early version just after Motorola sold to M/A-COM.  All parts in stock are produced with original Motorola die. 

    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF171A-MA

  4. MRF166W M/A-COM Transistor RF MOSFET 40W 500MHz 28V

    MRF166W M/A-COM Transistor RF MOSFET 40W 500MHz 28V

    Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz, N–Channel enhancement mode MOSFET

    MFR: M/A-COM
    SKU: MRF166W-MA

  5. MRF166C M/A-COM RF MOSFET Transistor 20W 500MHz 28V

    MRF166C M/A-COM RF MOSFET Transistor 20W 500MHz 28V

     Designed primarily for wideband large–signal output and driver from 30–500MHz, N–Channel enhancement mode MOSFET

    • MRF166C — Guaranteed performance at 500 MHz, 28 Vdc, Output power = 20 W, Gain = 13.5 dB, Efficiency = 50%
    • Replacement for industry standards such as MRF136, V2820, BLF244, SD1902, and ST1001
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Facilitates manual gain control, ALC and modulation techniques
    • Excellent thermal stability, ideally suited for Class A operation
    • Low Crss — 4.0 pF @ VDS = 28 V

    MFR: M/A-COM
    SKU: MRF166C-MA

  6. MRF160 M/A-COM  RF MOSFET Broadband Power FET 4W to 500MHz 28V

    MRF160 M/A-COM RF MOSFET Broadband Power FET 4W to 500MHz 28V

    Designed primarily for wideband large–signal output and driver from 30–500 MHz.
    N–Channel enhancement mode MOSFET

    • Guaranteed 28 V, 500 MHz performance  Output power = 4.0 W  Gain = 16 dB (min.)  Efficiency = 55% (typ.)
    • Excellent thermal stability, ideally suited for Class A operation
    • Facilitates manual gain control, ALC and modulation techniques
    • 100% Tested for load mismatch at all phase angles with 30:1 VSWR
    • Low Crss – 0.8 pF Typical at VDS = 28 V

    MFR: M/A-COM
    SKU: MRF160-MA

  7. MRF158 M/A-COM Transistor 2 watt 28 500 MHz (NOS)

    MRF158 M/A-COM Transistor 2 watt 28 500 MHz (NOS)

    Designed for wideband large signal amplifier and oscillator  applications to 500MHz  N–Channel enhancement mode

    • Guaranteed 28 volt, 500 MHz performance  Output power = 2.0 watts  Minimum gain = 16 dB (Min.)  Efficiency = 55% (Typ.)
    • Facilitates manual gain control, ALC and modulation techniques
    • Tested for load mismatch at all phase angles with 30:1 VSWR
    • Excellent thermal stability and ideally suited for Class A operation

    MFR: M/A-COM
    SKU: MRF158-MA

  8. MRF154 M/A-COM Broadband RF Power MOSFET Transistor 600W to 80MHz 50V

    MRF154 M/A-COM Broadband RF Power MOSFET Transistor 600W to 80MHz 50V

    $869.91

    The MRF154 transistor is commonly used in a variety of RF power amplifier applications, such as in radio and television broadcasting, wireless communication systems, and radar systems. It is also used in industrial applications, such as in welding equipment and plasma generators.

    The MRF154 transistor is a high-quality and reliable component that offers excellent performance in a wide range of RF power applications. Its high power rating, frequency range, and voltage rating make it a popular choice for use in a variety of high-power applications.

    Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range.  
    N–Channel enhancement mode MOSFET.
    Specified 50 volts
    30 MHz characteristics
    Output power = 600 watts  
    Power gain = 17 dB (typical)  
    Efficiency = 45% (typical)

    Not available for export
    MFR: M/A-COM
    SKU: MRF154-MA

  9. MRF151 RF Power Field-Effect Transistor Matched Pair (2)150 Watt 50 Volt 175 MHz N-Channel Broadband MOSFET

    MRF151 RF Power Field-Effect Transistor Matched Pair (2)150 Watt 50 Volt 175 MHz N-Channel Broadband MOSFET

    $159.91

    Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

    Features guaranteed Performance at 30 MHz, 50 V:

    • Output Power — 150 W
    • Gain — 18 dB (22 dB Typ)
    • Efficiency — 40%
    Typical Performance at 175 MHz, 50 V:
    • Output Power — 150 W
    • Gain — 13 dB
    • Low Thermal Resistance
    • Ruggedness Tested at Rated Output Power
    • Nitride Passivated Die for Enhanced Reliability

    MRF: MA/COM
    SKU: MRF151MP-MA

  10. MRF151 M/A-COM RF Power Field-Effect MOSFET Transistor 150W 50V 175 MHz N-Channel Broadband

    MRF151 M/A-COM RF Power Field-Effect MOSFET Transistor 150W 50V 175 MHz N-Channel Broadband

    $79.91

    Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

    Features guaranteed Performance at 30 MHz, 50 V:

    • Output Power — 150 W
    • Gain — 18 dB (22 dB Typ)
    • Efficiency — 40%
    Typical Performance at 175 MHz, 50 V:
    • Output Power — 150 W
    • Gain — 13 dB
    • Low Thermal Resistance
    • Ruggedness Tested at Rated Output Power
    • Nitride Passivated Die for Enhanced Reliability

    MFR: M/A-COM
    SKU: MRF151-MA

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