BIRD Digital RF
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RD70HHF1 Mitsubishi Silicon MOSFET Power Transistor 70W 30 MHz 12.5V (NOS) Icom IC-7000
$59.91DESCRIPTION
RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
FEATURES
High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
RoHS COMPLIANT
RD70HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking.Finals used in the HF/50 MHz section of the Icom IC-7000 transmitter.
New Old Stock * No longer available for export * End Of Life 2017
MFR: Mitsubishi, Japan
SKU: RD70HHF1 -
RD70HVF1-101 Mitsubishi Transistor 70 Watt 175 MHz 12.5V (NOS) Icom IC-7000
$37.91 As low as: $36.01The RD70HVF1-101 is a Mitsubishi RF power transistor that is designed for use in high-frequency power amplifier circuits. This transistor is specifically designed for use in the VHF frequency range, with a frequency range of 136-174 MHz.
The RD70HVF1-101 transistor is a high-performance and reliable component that offers excellent performance in a wide range of VHF power amplifier applications. Its high power output, frequency range, and built-in matching circuit make it a popular choice for use in various radio communication systems, including amateur radio, commercial radio, and military radio systems.
Silicon MOSFET Power Transistor RoHS Compliant 175MHz 70W 520MHz 50W (NOS)
MFR #: RD70HVF1-101
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD70HVF1Finals used in the 144 MHz section of the Icom IC-7000 transmitter.
See Data Sheet for more information
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RD20HMF1 Mitsubishi Transistor 20 Watt 900 MHz 12.5V (NOS)
$31.91 -
RD16HHF1-501 Mitsubishi Silicon MOSFET Power Transistor 16W 30 MHz 12.5V
$8.91 As low as: $7.26RD16HHF1 is a MOS FET transistor specifically designed for HF, RF power amplifiers applications.
he RD16HHF1-501 is a reliable and efficient power transistor that offers a good balance of power handling and frequency range. It is a popular choice for use in a variety of applications, such as in amateur radio and other communication systems where reliable and efficient power amplification is required.
FEATURES: High power gain: Pout>16 W, Gp>16 dB @Vdd=12.5 V,f=30 MHz.
APPLICATION: For output stage of high power amplifiers in HF band.MFR: Mitsubishi, Japan
SKU: RD16HHF1-501EOL 12/2022
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RD15HVF1-101 Mitsubishi Transistor 175MHz to 520MHz 15W (NOS)
$14.91 As low as: $14.16 -
RD01MUS1-T113 Mitsubishi Transistor (NOS)
$1.91 -
RD01MUS2 Mitsubishi Transistor (NOS)
$1.91 -
RD02MUS1-T112 Mitsubishi Transistor (NOS)
$4.91 -
RD06HHF1-101 Mitsubishi Transistor 6W 30 MHz 12.5V (NOS)
$13.91 -
RD06HVF1 Mitsubishi Transistor 6W 175 MHz 12.5V (NOS)
$9.91
