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MRF151G-MA-M Transistor, M/A-COM w/Motorola Die

MRF151G-MA-M Transistor, M/A-COM w/Motorola Die

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MRF151G-MA-M Transistor, M/A-COM w/Motorola Die

MRF151G-MA-M Transistor, M/A-COM MRF151G Early Version produced with Motorola die


Limited Quantity available.

Details

MRF151G-MA-M Transistor, M/A-COM MRF151G Early Version produced with Motorola die

Limited Quantity available. (The M in the date code line signifies Motorola die - See picture)

MRF151G RF Power Field-Effect Transistor  300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

Features 
Guaranteed Performance at 175 MHz, 50 V: 
• Output Power — 300 W 
• Gain — 14 dB (16 dB Typ) 
• Efficiency — 50% 
• Low Thermal Resistance — 0.35°C/W 
• Ruggedness Tested at Rated Output Power 
• Nitride Passivated Die for Enhanced Reliability

 

Description and Applications 
Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.


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