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MRF151MP-MA RF Power Field-Effect Transistor, Matched Pair, 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET, M/A-COM

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MRF151MP-MA RF Power Field-Effect Transistor, Matched Pair, 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET,  M/A-COM

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Quick Overview

MRF151MP-MA RF Power Field-Effect Transistor, Matched Pair, 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET, MFR: M/A-COM

Details

MRF151MP RF Power Field-Effect Transistor, Matched Pair, 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET

Features
Guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40%
Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability

Description and Applications
Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

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