Details
Transistor, Mitsubishi RD70HHF1
DESCRIPTION
RD70HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
•High power and High Gain:
Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz
•High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 50 V
VGSS Gate to source voltage Vds=0V +/-20 V
Pch Channel dissipation Tc=25°C 150 W
Pin Input power Zg=Zl=50Ω 5 W
ID Drain current - 20 A
Tch Channel Temperature - 175 °C
Tstg Storage temperature - -40 to +175 °C
Rth j-c Thermal resistance junction to case 1.0 °C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25deg.C , UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS LIMITS UNIT
MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 10 uA
IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA
VTH Gate threshold voltage VDS=12V, IDS=1mA 1.5 - 4.5 V
Pout Output power f=30MHz ,VDD=12.5V 70 80 - W
ηD Drain efficiency Pin=3.5W,Idq=1.0A 55 60 - %
Load VSWR tolerance VDD=15.2V,Po=70W(Pin Control)
f=30MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy -
Note : Above parameters , ratings , limits and conditions are subject to change.
