Transistors - RF, Mosfets, Misc.
Please click on a subcategory.
-
RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V
$49.91 As low as: $42.79 -
RD15HVF1-501 Mitsubishi MOSFET RF Power Transistor 175 MHz 15W
$14.91 As low as: $12.76 -
RD100HHF1C-501 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V
$54.91 As low as: $47.08The RD100HHF1C-501 is a high-performance transistor suitable for use in a variety of applications where high-power and high-frequency operation are required, such as in radio transmitters, RF amplifiers, and other communications equipment.
The RD100HHF1C-501 is a power transistor designed for use in high-frequency applications, with a maximum operating frequency of 30MHz. It is capable of handling up to 100 watts of power and operates at a voltage of 12.5V.
MOSFET Power Transistor 30MHz 100 Watts 12.5 Volts
RoHS Compliant
MFR: Mitsubishi, Japan
SKU: RD100HHF1C-501 -
RD70HVF1C-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz 70W / 520MHz 50W
$43.91The RD70HVF1C-501 is a Mitsubishi silicon MOSFET power transistor that is designed for use in high-frequency power amplifier circuits. This transistor is specifically designed for use in the VHF and UHF frequency ranges, with a frequency range of 136-174 MHz and 400-520 MHz, respectively.
The RD70HVF1C-501 transistor is a high-performance and reliable component that offers excellent performance in a wide range of VHF and UHF power amplifier applications. Its high power output, frequency range, and built-in matching circuit make it a popular choice for use in various radio communication systems, including amateur radio, commercial radio, and military radio systems.
RD70HVF1C is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications
High power and High Gain:
Pout>70W, Gp>10.6dB @Vds=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vds=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
Integrated gate protection diodeRoHS Compliant
MFR: Mitsubishi
SKU: RD70HVF1C-501See Data Sheet for more information
-
RD70HUP2-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz - 530MHz 70W 12.5V
$24.91 As low as: $21.37RD70HUP2 is a MOSFET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
- High Power and High Efficiency Pout=75Wtyp
- Drain Effi.=64.0%typ @ Vds=12.5V Idq=1.0A Pin=5.0W f=530MHz Pout=84Wtyp
- Drain Effi.=74%typ @ Vds=12.5V Idq=1.0A Pin=4.0W f=175MHz
- Integrated gate protection diode.
RoHS Compliant
MFR: Mitsubishi
SKU: RD70HUP2-501See Data Sheet
-
RD00HVS1-T113 Mitsubishi Transistor (NOS)
$1.91 -
RD01MUS1-T113 Mitsubishi Transistor (NOS)
$1.91 -
RD01MUS2 Mitsubishi Transistor (NOS)
$1.91 -
RD02MUS1-T112 Mitsubishi Transistor (NOS)
$4.91 -
RD06HHF1-101 Mitsubishi Transistor 6W 30 MHz 12.5V (NOS)
$13.91