Transistors - RF, Mosfets, Misc.

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MRF313 M/A-COM NPN Silicon High-Frequency Transistor 1.0W 400MHz 28V (NOS)

$34.91
Designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio.
- Specified 28 V, 400 MHz characteristics — Output power = 1.0 W, Power gain = 15 dB min., Efficiency = 45% typ.
- Emitter ballast and low current density for improved MTBF
- Common emitter for improved stability
New Old Stock * No longer available for export
MRF: M/A-COM
SKU: MRF313-MA
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MRF314 M/A-COM NPN Silicon Power Transistor 30W 30-200MHz 28V

$48.91 As low as: $46.46
Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
MRF: M/A-COM
SKU: MRF314-MA
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MRF314 M/A-COM NPN Silicon Power Transistor 30W 30-200MHz 28V Matched Pair (2)

$97.91
Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
MRF: MA/COM
SKU: MRF314MP-MA
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MRF317 M/A-COM NPN Silicon Power Transistor 100W 30-200MHz 28V

$97.91 As low as: $93.01
Designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 100 W, Minimum gain = 9.0 dB
- Built–in matching network for broadband operation
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- High output saturation power — ideally suited for 30 W carrier/120 W
- Peak AM amplifier service
- Guaranteed performance in broadband test fixture
MFR: M/A-COM
SKU: MRF317-MA
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MRF321 M/A-COM NPN Silicon Power Transistor 10W 400MHz 28V (NOS)

$103.91 As low as: $72.95
Made with original Motorola Die

Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 Vdc; Output power = 10 W, Power gain = 12 dB min., Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input Impedance
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF321-MA
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MRF323 M/A-COM Transistor 20 watt 28v 400 MHz

$107.91
Made with original Motorola Die
- Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 V: Output power = 20 W, Power gain = 10 dB min., Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input impedance
MFR: M/A-COM
SKU: MRF323-MA
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MRF327 M/A-COM Controlled “Q” Broadband Power Transistor, 80W 100 to 500MHz 28V

$48.91 As low as: $46.91
Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range.
- Guaranteed performance @ 400 MHz, 28 Vdc; Output power = 80 W over 225 to 400 MHz Band, Minimum gain = 7.3 dB @ 400 MHz
- Built–in matching network for broadband operation using double match technique
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
- Characterized for 100 =8 500 MHz
MRF: M/A-COM
SKU: MRF327-MA
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MRF392 M/A-COM Controlled “Q” Broadband Power Transistor 125W 30 to 500MHz 28V

$106.91 As low as: $96.91
Made with original Motorola Die

Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.
- Specified 28 V, 400 MHz characteristics — Output power = 125 W, Typical gain = 10 dB, Efficiency = 55% (typ.)
- Built–in input impedance matching networks for broadband operation
- Push–pull configuration reduces even numbered harmonics
- Gold metallization system for high reliability
- 100% tested for load mismatch
MRF: M/A-COM
SKU: MRF392-MA
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Transistors - RF, Mosfets, Misc.

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