Transistors - RF, Mosfets, Misc.
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MRF313 M/A-COM NPN Silicon High-Frequency Transistor 1.0W 400MHz 28V (NOS)
$34.91Designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio.
- Specified 28 V, 400 MHz characteristics — Output power = 1.0 W, Power gain = 15 dB min., Efficiency = 45% typ.
- Emitter ballast and low current density for improved MTBF
- Common emitter for improved stability
New Old Stock * No longer available for export
MRF: M/A-COM
SKU: MRF313-MA -
MRF158 M/A-COM Transistor 2 watt 28 500 MHz (NOS)
$35.91 As low as: $31.91Designed for wideband large signal amplifier and oscillator applications to 500MHz N–Channel enhancement mode
- Guaranteed 28 volt, 500 MHz performance Output power = 2.0 watts Minimum gain = 16 dB (Min.) Efficiency = 55% (Typ.)
- Facilitates manual gain control, ALC and modulation techniques
- Tested for load mismatch at all phase angles with 30:1 VSWR
- Excellent thermal stability and ideally suited for Class A operation
MFR: M/A-COM
SKU: MRF158-MA -
MRF426 M/A-COM NPN Silicon Power Transistor 25 W (PEP) 30 MHz 28 V
$39.91Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.
- Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
- Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Class A and AB characterization
- BLX 13 equivalent
MFR: M/A-COM
SKU: MRF426-MA -
MRF160 M/A-COM RF MOSFET Broadband Power FET 4W to 500MHz 28V
$46.91 As low as: $44.56Designed primarily for wideband large–signal output and driver from 30–500 MHz.
N–Channel enhancement mode MOSFET- Guaranteed 28 V, 500 MHz performance Output power = 4.0 W Gain = 16 dB (min.) Efficiency = 55% (typ.)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% Tested for load mismatch at all phase angles with 30:1 VSWR
- Low Crss – 0.8 pF Typical at VDS = 28 V
MFR: M/A-COM
SKU: MRF160-MA -
MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz
$48.91 As low as: $44.14Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.
MFR: M/A-COM
SKU: MRF173-MA -
MRF314 M/A-COM NPN Silicon Power Transistor 30W 30-200MHz 28V
$48.91 As low as: $46.46Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
MRF: M/A-COM
SKU: MRF314-MA -
MRF327 M/A-COM Controlled “Q” Broadband Power Transistor, 80W 100 to 500MHz 28V
$48.91 As low as: $46.91Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range.
- Guaranteed performance @ 400 MHz, 28 Vdc; Output power = 80 W over 225 to 400 MHz Band, Minimum gain = 7.3 dB @ 400 MHz
- Built–in matching network for broadband operation using double match technique
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
- Characterized for 100 =8 500 MHz
MRF: M/A-COM
SKU: MRF327-MA -
MRF166C M/A-COM RF MOSFET Transistor 20W 500MHz 28V
$51.91 As low as: $49.31Designed primarily for wideband large–signal output and driver from 30–500MHz, N–Channel enhancement mode MOSFET
- MRF166C — Guaranteed performance at 500 MHz, 28 Vdc, Output power = 20 W, Gain = 13.5 dB, Efficiency = 50%
- Replacement for industry standards such as MRF136, V2820, BLF244, SD1902, and ST1001
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Facilitates manual gain control, ALC and modulation techniques
- Excellent thermal stability, ideally suited for Class A operation
- Low Crss — 4.0 pF @ VDS = 28 V
MFR: M/A-COM
SKU: MRF166C-MA -
MRF171A M/A-COM Transistor RF MOSFET 45W 150MHz 28V (NOS)
$53.91Designed primarily for wideband large–signal output and driver stages from 30–200 MHz, N–Channel enhancement mode MOSFET
- Guaranteed performance at 150 MHz, 28 Vdc, Output power = 45 W, Power gain = 17 dB (min), Efficiency = 60% (min)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Low Crss – 8 pF @ VDS = 28 V
- Gold top metal, Typical data for power amplifier applications in industrial, commercial and amateur radio equipment
- Typical performance at 30 MHz, 28 Vdc, Output power = 30 W (PEP), Power gain = 20 dB (typ.), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (typ.)
Parts we have available are early version just after Motorola sold to M/A-COM. All parts in stock are produced with original Motorola die.
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF171A-MA -
MRF455 M/A-COM NPN Silicon Power Transistor 60 Watt 14-30 MHz 12.5v 0.380" Flange
$57.91