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  1. MRF227 Microsemi NPN Silicon RF Power Transistor 12.5 V 225 MHz 3W

    MRF227 Microsemi NPN Silicon RF Power Transistor 12.5 V 225 MHz 3W

    $6.91 As low as: $5.61

    Designed for 12.5 Volt VHF large-signal power amplifier applications in communication equipment operating at 225 MHz. Ideally suited for Class E citizens band radio.

    • Specified 12.5 Volt, 225 MHz Characteristics- Output Power= 3.0 W, Minimum Gain= 13.5 dB, efficiency= 60%

    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF227-MSC

  2. MRF237 Microsemi NPN Silicon RF Power Transistor 12.5 V/90 MHz/15 W (NOS)

    MRF237 Microsemi NPN Silicon RF Power Transistor 12.5 V/90 MHz/15 W (NOS)

    $9.91

    Specified 12.5 Volt,175 MHz Characteristics- Output Power= 4.0 W, Minimum Gain= 12 dB, efficiency= 50%

    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF237-MSC

  3. MRF4427 Microsemi RF & Microwave Discrete Low Power Transistor 20dB 200 MHz (NOS)

    MRF4427 Microsemi RF & Microwave Discrete Low Power Transistor 20dB 200 MHz (NOS)

    $1.91

    Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.

    • Low Cost SO-8 Plastic Surface Mount Package.
    • S-Parameter Characterization
    • Tape and Reel Packaging Options Available
    • Low Voltage Version of MRF3866
    • Maximum Available Gain – 20dB(typ) @ 200MHz

    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF4427-MSC

  4. MRF545 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)

    MRF545 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)

    $5.91 As low as: $5.06

    Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.

    • Silicon PNP, high Frequency, high breakdown, Transistor
    • Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz
    • High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
    • High FT - 1400 MHz

    No longer manufactured
    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF545-MSC

  5. MRF553 Microsemi RF and Microwave Discrete Low Power Transistor 1.5 W 175 MHz 12.5 V (NOS)

    MRF553 Microsemi RF and Microwave Discrete Low Power Transistor 1.5 W 175 MHz 12.5 V (NOS)

    $4.91 As low as: $4.43

    Designed primarily for wideband large signal stages in the VHF frequency range.

    • Specified @ 12.5 V, 175 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 11.5 dB, Efficiency 60% (Typ)
    • Cost Effective PowerMacro Package
    • Electroless Tin Plated Leads for Improved Solderability

    No longer manufactured
    New Old Stock * No longer available for export
    MFR: Microsemi
    MFR: MRF553-MSC

  6. MRF5943 Microsemi RF & Microwave Discrete Low Power Transistor (NOS)

    MRF5943 Microsemi RF & Microwave Discrete Low Power Transistor (NOS)

    $2.91

    Designed for general-purpose RF amplifier applications, such as; pre-drivers, drivers, Oscillators, etc.

    • Maximum Available Gain = 17dB @ 300MHz

    New Old Stock * No longer available for export
    MFR: Microsemi

  7. MRF557 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)

    MRF557 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)

    $2.91 As low as: $2.62

    Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

    • Low Noise - 2.5 dB @ 500 MHZ
    • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
    • Ftau - 5.0 GHz @ 10v, 75mA
    • Cost Effective MacroX Package

    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF557-MSC

  8. MRF559 Microsemi RF and Microwave Discrete Low Power Transistor 0.5W 870 MHz 12V (NOS)

    MRF559 Microsemi RF and Microwave Discrete Low Power Transistor 0.5W 870 MHz 12V (NOS)

    $4.91

    Designed primarily for wideband large signal stages in the UHF frequency range.

    • Specified @ 12.5 V, 870 MHz Characteristics: Output Power = .5 W, Minimum Gain = 8.0 dB, Efficiency 50%
    • Cost Effective Macro X Package
    • Electroless Tin Plated Leads for Improved Solderability

    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF559-MSC

  9. MRF581G Microsemi Transistor (NOS)

    MRF581G Microsemi Transistor (NOS)

    $3.91

    • Transistor Type: NPN
    • Voltage - Collector Emitter Breakdown (Max): 18V
    • Frequency - Transition: 5GHz
    • Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
    • Gain: 13dB ~ 15.5dB
    • Power - Max: 1.25W
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
    • Current - Collector (Ic) (Max): 200mA
    • Operating Temperature: 150°C (TJ)
    • Mounting Type: Surface Mount

    No longer manufactured
    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF581G-MSC

  10. MRF586 Microsemi RF & Microwave Discrete Low Power NPN Silicon Transistor (NOS)

    MRF586 Microsemi RF & Microwave Discrete Low Power NPN Silicon Transistor (NOS)

    $6.91

    Designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.

    • Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA
    • GU max= 12.5dB (typ) @ 300 MHz, 15v, 40mA
    • |S21|2= 12.5dB (typ) @ 300 MHz, 15v, 40mA

    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF586-MSC

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