Transistors - RF, Mosfets, Misc.

Made with original Motorola Die

• Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range.
• Guaranteed performance at 400 MHz, 28 V: Output power = 20 W, Power gain = 10 dB min., Efficiency = 50% min.
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Gold metallization system for high reliability
• Computer–controlled wirebonding gives consistent input impedance

MFR: M/A-COM
SKU: MRF323-MA

Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range.

• Guaranteed performance @ 400 MHz, 28 Vdc; Output power = 80 W over 225 to 400 MHz Band, Minimum gain = 7.3 dB @ 400 MHz
• Built–in matching network for broadband operation using double match technique
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Gold metallization system for high reliability applications
• Characterized for 100 =8 500 MHz

MRF: M/A-COM
SKU: MRF327-MA

Made with original Motorola Die

Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.

• Specified 28 V, 400 MHz characteristics — Output power = 125 W, Typical gain = 10 dB, Efficiency = 55% (typ.)
• Built–in input impedance matching networks for broadband operation
• Push–pull configuration reduces even numbered harmonics
• Gold metallization system for high reliability
• 100% tested for load mismatch

MRF: M/A-COM
SKU: MRF392-MA

Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. N-Channel enhancement mode

• Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power gain — 10 dB (min.), Efficiency — 50% (min.)
• 100% tested for load mismatch at all phase angles with VSWR 30:1
• Overall lower capacitance @ 28 V: Ciss — 135 pF, Coss — 140 pF, Crss — 17 pF
• Simplified AVC, ALC and modulation
• Typical data for power amplifiers in industrial and commercial applications:
• Typical performance @ 400 MHz, 28 Vdc: Output power — 150 W, Power gain — 12.5 dB, Efficiency — 60%
• Typical performance @ 225 MHz, 28 Vdc: Output power — 200 W, Power gain — 15 dB, Efficiency — 65%

MRF: M/A-COM
MRF275G-MA

Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode

• Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 100 W, Power gain — 8.8 dB typ., Efficiency — 55% typ.
• 100% ruggedness tested at rated output power
• Low thermal resistance
• Low Crss — 17 pF typ. @ VDS = 28 V

MFR: M/A-COM
SKU: MRF275L-MA

Made with original Motorola Die

Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.

• Guaranteed performance at 400 MHz, 28 Vdc
• Output power = 10 W
• Power gain = 12 dB min.
• Efficiency = 50% min.
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Gold metallization system for high reliability
• Computer–controlled wirebonding gives consistent input Impedance

MRF: M/A-COM
SKU: MRF134-MA

Made with original Motorola Die

Designed for wideband large signal amplifier and oscillator applications  Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode

MFR: M/A-COM
SKU: MRF136Y-MA

Made with original Motorola Die

Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode

• Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)
• Superior high order IMD
• MD(d3) (150 W PEP): –30 dB (Typ.)
• IMD(d11) (150 W PEP): –60 dB (Typ.)
• 100% tested for load mismatch at all phase angles with 30:1 VSWR

MFR: M/A-COM
SKU: MRF140-MA

MRF141G Transistor, RF Power FET, 300W, 175MHz, 28V, MFR: M/A-COM  No longer available for Export, (NOS)