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  1. MRF173CQ Motorola RF MOSFET Transistor 80W 175MHz 28V (NOS)

    MRF173CQ Motorola RF MOSFET Transistor 80W 175MHz 28V (NOS)

    $74.91

    Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode MOSFET

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF173CQ-MOT

  2. MRF164W Motorola Power Field Effect Transistor 28 Volt (NOS)

    MRF164W Motorola Power Field Effect Transistor 28 Volt (NOS)

    $69.91

    Designed primarily for wideband large-scale output and driver stages to 500MHz.

    • Guaranteed Performance at 400 MHZ, 28 Vdc
    • Output Power: 20 W
    • Minimum Gain: 15dB
    • Push-Pull Configuration Reduces Even Bumbered Harmonics
    • Excellent Thermal Stability, suited for Class A Operation
    • Allows Manual Gain Control, ALC and Modulation Techniques
    • 30:1 VSWR

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF164W

  3. MRF156 Motorola Transistor (NOS)

    MRF156 Motorola Transistor (NOS)

    $399.91

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF156

  4. MRF153 Motorola Transistor (NOS)

    MRF153 Motorola Transistor (NOS)

    $249.91

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF153


  5. MRF15030 Motorola RF Power Transistor 30W 1490 MHz 26V (NOS)

    MRF15030 Motorola RF Power Transistor 30W 1490 MHz 26V (NOS)

    $79.91

    New Old Stock * No longer available for export
    MFR: Motorola 
    SKU: MRF15030

    Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz.  Specified 26 V 1490 MHz.

    Class AB Characteristics: Output Power, 30 W Gain, 9 dB Min @ 30 Watts (PEP) Efficiency, 30% Min @ 30 Watts (PEP) Intermodulation Distortion.  30 dBc Max @ 30 Watts (PEP)

    Made in the USA
  6. MRF175GU M/A-COM Transistor 150 watt 28v 400 MHz

    MRF175GU M/A-COM Transistor 150 watt 28v 400 MHz

    $191.91 As low as: $182.31

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    • Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`
    • 100% ruggedness tested at rated output power
    • Low thermal resistance
    • Low Crss — 20 pF typ @ VDS = 28 V

    MRF: M/A-COM
    SKU: MRF175GU-MA

  7. MRF174 M/A-COM Transistor RF MOSFET 125W 200MHz

    MRF174 M/A-COM Transistor RF MOSFET 125W 200MHz

    $63.91

    Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range, N–Channel enhancement mode MOSFET

    • Guaranteed performance at 150 MHz, 28 Vdc, Output power = 125 W, Minimum gain = 9.0 dB, Efficiency = 50% (min.)
    • Excellent thermal stability, ideally suited for Class A operation
    • Facilitates manual gain control, ALC and modulation techniques
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Low noise figure — 3.0 dB typ. at 2.0 A, 150 MHz

    MFR: M/A-COM
    SKU: MRF174-MA

  8. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

    $307.91

    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    MFR: M/A-COM

  9. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)

    $153.91

    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    MFR: M/A-COM

  10. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V

    $76.91

    MRF150 RF Power FET Transistor 150W to 150MHz 50V M/A-COM
    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    SKU: MRF150-MA

Items 21 to 30 of 52 total

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