Transistors - RF, Mosfets, Misc.

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode MOSFET

New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF173CQ-MOT

Designed primarily for wideband large-scale output and driver stages to 500MHz.

• Guaranteed Performance at 400 MHZ, 28 Vdc
• Output Power: 20 W
• Minimum Gain: 15dB
• Push-Pull Configuration Reduces Even Bumbered Harmonics
• Excellent Thermal Stability, suited for Class A Operation
• Allows Manual Gain Control, ALC and Modulation Techniques
• 30:1 VSWR

New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF164W

New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF156

New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF153

Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF151G-MOT

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

• Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix),
• Output power — 200 W, Power gain — 14 dB typical, Efficiency — 65% typical
• 100% ruggedness tested at rated output power
• Low thermal resistance
• Low Crss — 20 pF typical @ VDS = 28 V

New Old Stock * No longer available for export 
MFR: M/A-COM
SKU: MRF175GV-MA

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

• Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`
• 100% ruggedness tested at rated output power
• Low thermal resistance
• Low Crss — 20 pF typ @ VDS = 28 V

MRF: M/A-COM
SKU: MRF175GU-MA

Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range, N–Channel enhancement mode MOSFET

• Guaranteed performance at 150 MHz, 28 Vdc, Output power = 125 W, Minimum gain = 9.0 dB, Efficiency = 50% (min.)
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniques
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Low noise figure — 3.0 dB typ. at 2.0 A, 150 MHz

MFR: M/A-COM
SKU: MRF174-MA

TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

• Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
• Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
• 100% tested for load mismatch at all phase angles

Applications

• Aerospace and Defense
• ISM 

MFR: M/A-COM